Inventor

ARENA CHANTAL

US67 patents

⚠️ This page may combine multiple inventors who share the name “ARENA CHANTAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ARENA CHANTAL

ARENA CHANTAL

Formation of substantially pit free indium gallium nitride

Photoactive devices with improved distribution of charge carriers, and methods of forming same

Methods for improving the quality of structures comprising semiconductor materials

Process for fabricating a structure for epitaxy without an exclusion zone

Abatement of reaction gases from gallium nitride deposition

Thermalization of gaseous precursors in CVD reactors

Gallium trichloride injection scheme

Gallium trichloride injection scheme

Methods for forming group III-nitride materials and structures formed by such methods

Methods for improving the quality of structures comprising semiconductor materials

Epitaxial methods and templates grown by the methods

Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain

Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters

Method of forming a composite laser substrate

Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same

Methods for improving the quality of group III-nitride materials and structures produced by the methods

Epitaxial methods for reducing surface dislocation density in semiconductor materials

Methods for improving the quality of epitaxially-grown semiconductor materials

Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods

Methods for improving the quality of structures comprising semiconductor materials

SOITEC SILICON ON INSULATOR

Methods for producing improved epitaxial materials

Methods and structures for altering strain in III-nitride materials

Process for fabricating a structure for epitaxy without an exclusion zone

Methods for high volume manufacture of group III-V semiconductor materials

Semiconductor structures including bonding layers, multi-junction photovoltaic cells and related methods

Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

Photoactive devices with improved distribution of charge carriers, and methods of forming same

Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures

Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain

Abatement of reaction gases from gallium nitride deposition

Temperature-controlled purge gate valve for chemical vapor deposition chamber

Thermalization of gaseous precursors in CVD reactors

III-V semiconductor structures and methods for forming the same

Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters

Metallic carrier for layer transfer and methods for forming the same

ASM INC

Selective deposition of silicon-containing films

Semiconductor buffer structures

Epitaxial growth of relaxed silicon germanium layers

Silicon-on-insulator structures and methods

Epitaxial growth of relaxed silicon germanium layers

Method to planarize and reduce defect density of silicon germanium

TOKYO ELECTRON LTD

Method for forming salicides

Method of eliminating edge effect in chemical vapor deposition of a metal

Method of improving surface morphology and reducing resistivity of chemical vapor deposition-metal films

COMMISSARIAT ENERGIE ATOMIQUE

Gaseous phase chemical treatment reactor

Heating plate for heating an object placed on its surface and chemical treatment reactor equipped with said plate

WERKHOVEN CHRISTIAAN J

Metallic carrier for layer transfer and methods for forming the same

BERTRAM JR RONALD THOMAS

UV absorption based monitor and control of chloride gas stream