P

Inventor

KIM YOUNG HEE

KR82 patents
⚠️ This page may combine multiple inventors who share the name “KIM YOUNG HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

21 patents
US7432567B2Oct 7, 2008

Metal gate CMOS with at least a single gate metal and dual gate dielectrics

IBM58 citations98
US7598545B2Oct 6, 2009

Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices

IBM20 citations93
US7902620B2Mar 8, 2011

Suspended germanium photodetector for silicon waveguide

IBM24 citations92
US7696036B2Apr 13, 2010

CMOS transistors with differential oxygen content high-k dielectrics

IBM33 citations92
US9391171B2Jul 12, 2016

Fin field effect transistor including a strained epitaxial semiconductor shell

IBM5 citations84
US9034748B2May 19, 2015

Process variability tolerant hard mask for replacement metal gate finFET devices

IBM13 citations84
US8861728B2Oct 14, 2014

Integrated circuit tamper detection and response

IBM12 citations84
US8383483B2Feb 26, 2013

High performance CMOS circuits, and methods for fabricating same

IBM10 citations84
US8035173B2Oct 11, 2011

CMOS transistors with differential oxygen content high-K dielectrics

IBM14 citations84
US7999323B2Aug 16, 2011

Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices

IBM7 citations84
US7709902B2May 4, 2010

Metal gate CMOS with at least a single gate metal and dual gate dielectrics

IBM11 citations84
US7666732B2Feb 23, 2010

Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics

IBM11 citations84
US7749847B2Jul 6, 2010

CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrode

IBM7 citations74
US9711416B2Jul 18, 2017

Fin field effect transistor including a strained epitaxial semiconductor shell

IBM2 citations73
US9397161B1Jul 19, 2016

Reduced current leakage semiconductor device

IBM3 citations73
US9679775B2Jun 13, 2017

Selective dopant junction for a group III-V semiconductor device

IBM2 citations72
US9418846B1Aug 16, 2016

Selective dopant junction for a group III-V semiconductor device

IBM4 citations72
US9627482B2Apr 18, 2017

Reduced current leakage semiconductor device

IBM1 citations63
US9054192B1Jun 9, 2015

Integration of Ge-containing fins and compound semiconductor fins

IBM2 citations63
US8912032B2Dec 16, 2014

Temperature control device for optoelectronic devices

IBM2 citations63
US7833849B2Nov 16, 2010

Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode

IBM4 citations63

HYUNDAI ELECTRONICS IND

9 patents

SAMSUNG ELECTRONICS CO LTD

9 patents

UNIV CALIFORNIA

1 patent

HYNIX SEMICONDUCTOR INC

1 patent

ASSEFA SOLOMON

1 patent

KIM YOUNG-HEE

1 patent

META BIOMED CO LTD

1 patent

KOREA ELECTRONICS TELECOMM

1 patent

ANDO TAKASHI

1 patent

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent

NAT UNIV CHANGWON IND ACAD COOP CORPS

1 patent

SAMSUNG HEAVY IND

1 patent

LIU JUN

1 patent

Showing the top 50 of 82 patents by PatentIndex Score.