Inventor
OHNO AKIHITO
JP20 patents
⚠️ This page may combine multiple inventors who share the name “OHNO AKIHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
17 patentsUS7763486B2Jul 27, 2010
Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device
MITSUBISHI ELECTRIC CORP7 citations73
US10858758B2Dec 8, 2020
Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP3 citations72
US9957638B2May 1, 2018
Method for manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP2 citations72
US9422640B2Aug 23, 2016
Single-crystal 4H-SiC substrate
MITSUBISHI ELECTRIC CORP1 citations62
US7923742B2Apr 12, 2011
Method for production of a nitride semiconductor laminated structure and an optical semiconductor device
MITSUBISHI ELECTRIC CORP2 citations62
US7825012B2Nov 2, 2010
Method for manufacturing nitride semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62
US10707075B2Jul 7, 2020
Semiconductor wafer, semiconductor device, and method for producing semiconductor device
MITSUBISHI ELECTRIC CORP1 citations61
US10950435B2Mar 16, 2021
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus
MITSUBISHI ELECTRIC CORP1 citations60
US10711372B2Jul 14, 2020
Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
MITSUBISHI ELECTRIC CORP0 citations51
US10370775B2Aug 6, 2019
Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
MITSUBISHI ELECTRIC CORP0 citations51
US9903048B2Feb 27, 2018
Single-crystal 4H-SiC substrate
MITSUBISHI ELECTRIC CORP0 citations51
US9752254B2Sep 5, 2017
Method for manufacturing a single-crystal 4H—SiC substrate
MITSUBISHI ELECTRIC CORP0 citations51
US7632695B2Dec 15, 2009
Semiconductor device manufacturing method
MITSUBISHI ELECTRIC CORP0 citations51
US9564315B1Feb 7, 2017
Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer
MITSUBISHI ELECTRIC CORP1 citations50
US9355841B2May 31, 2016
Manufacturing method of high electron mobility transistor
MITSUBISHI ELECTRIC CORP0 citations50
US7172429B2Feb 6, 2007
Method of manufacturing semiconductor light emitting device
MITSUBISHI ELECTRIC CORP0 citations41
US9478418B2Oct 25, 2016
Method of manufacturing semiconductor element
MITSUBISHI ELECTRIC CORP0 citations40