P

Inventor

OHNO AKIHITO

JP20 patents
⚠️ This page may combine multiple inventors who share the name “OHNO AKIHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

17 patents
US7763486B2Jul 27, 2010

Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device

MITSUBISHI ELECTRIC CORP7 citations73
US10858758B2Dec 8, 2020

Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device

MITSUBISHI ELECTRIC CORP3 citations72
US9957638B2May 1, 2018

Method for manufacturing silicon carbide semiconductor device

MITSUBISHI ELECTRIC CORP2 citations72
US9422640B2Aug 23, 2016

Single-crystal 4H-SiC substrate

MITSUBISHI ELECTRIC CORP1 citations62
US7923742B2Apr 12, 2011

Method for production of a nitride semiconductor laminated structure and an optical semiconductor device

MITSUBISHI ELECTRIC CORP2 citations62
US7825012B2Nov 2, 2010

Method for manufacturing nitride semiconductor device

MITSUBISHI ELECTRIC CORP3 citations62
US10707075B2Jul 7, 2020

Semiconductor wafer, semiconductor device, and method for producing semiconductor device

MITSUBISHI ELECTRIC CORP1 citations61
US10950435B2Mar 16, 2021

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus

MITSUBISHI ELECTRIC CORP1 citations60
US10711372B2Jul 14, 2020

Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus

MITSUBISHI ELECTRIC CORP0 citations51
US10370775B2Aug 6, 2019

Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus

MITSUBISHI ELECTRIC CORP0 citations51
US9903048B2Feb 27, 2018

Single-crystal 4H-SiC substrate

MITSUBISHI ELECTRIC CORP0 citations51
US9752254B2Sep 5, 2017

Method for manufacturing a single-crystal 4H—SiC substrate

MITSUBISHI ELECTRIC CORP0 citations51
US7632695B2Dec 15, 2009

Semiconductor device manufacturing method

MITSUBISHI ELECTRIC CORP0 citations51
US9564315B1Feb 7, 2017

Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer

MITSUBISHI ELECTRIC CORP1 citations50
US9355841B2May 31, 2016

Manufacturing method of high electron mobility transistor

MITSUBISHI ELECTRIC CORP0 citations50
US7172429B2Feb 6, 2007

Method of manufacturing semiconductor light emitting device

MITSUBISHI ELECTRIC CORP0 citations41
US9478418B2Oct 25, 2016

Method of manufacturing semiconductor element

MITSUBISHI ELECTRIC CORP0 citations40

OHNO AKIHITO

2 patents

SHIGIHARA KIMIO

1 patent