Inventor

BAJAJ MOHIT

IN29 patents

⚠️ This page may combine multiple inventors who share the name “BAJAJ MOHIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAJAJ MOHIT

IBM

Stable work function for narrow-pitch devices

Stable work function for narrow-pitch devices

Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer

Junctionless tunnel fet with metal-insulator transition material

Symmetric tunnel field effect transistor

Symmetric tunnel field effect transistor

Stable work function for narrow-pitch devices

Semiconductor device with a stoichiometric gradient

Modeling charge distribution on FinFET sidewalls

Symmetric tunnel field effect transistor

Symmetric tunnel field effect transistor

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

Symmetric tunnel field effect transistor

Symmetric tunnel field effect transistor

Junctionless tunnel FET with metal-insulator transition material

Gate strain induced work function engineering

Tunable voltage margin access diodes

Tunable voltage margin access diodes

Tunable voltage margin access diodes

Tunable voltage margin access diodes

BAJAJ MOHIT

Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)

Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistor

Gate strain induced work function engineering

GLOBALFOUNDRIES INC

Logic layout with reduced area and method of making the same

GLOBALFOUNDRIES US INC

Transistor with phase transition material region between channel region and each source/drain region