Inventor
PANDEY RAJAN K
IN18 patents
⚠️ This page may combine multiple inventors who share the name “PANDEY RAJAN K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
15 patentsUS9583486B1Feb 28, 2017
Stable work function for narrow-pitch devices
IBM20 citations92
US10170576B2Jan 1, 2019
Stable work function for narrow-pitch devices
IBM7 citations84
US9627484B1Apr 18, 2017
Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer
IBM7 citations84
US9735250B2Aug 15, 2017
Stable work function for narrow-pitch devices
IBM4 citations73
US9589635B2Mar 7, 2017
Semiconductor device with a stoichiometric gradient
IBM6 citations72
US10366897B2Jul 30, 2019
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US10347494B2Jul 9, 2019
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US10319596B2Jun 11, 2019
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US9984883B2May 29, 2018
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US9972497B2May 15, 2018
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US9070579B2Jun 30, 2015
Gate strain induced work function engineering
IBM0 citations51
US9705079B2Jul 11, 2017
Tunable voltage margin access diodes
IBM0 citations50
US9680096B2Jun 13, 2017
Tunable voltage margin access diodes
IBM0 citations50
US9647210B2May 9, 2017
Tunable voltage margin access diodes
IBM0 citations50
US9508930B2Nov 29, 2016
Tunable voltage margin access diodes
IBM0 citations50
BAJAJ MOHIT
3 patentsUS8450792B2May 28, 2013
Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)
BAJAJ MOHIT2 citations60
US8929039B2Jan 6, 2015
Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistor
BAJAJ MOHIT2 citations59
US9105498B2Aug 11, 2015
Gate strain induced work function engineering
BAJAJ MOHIT1 citations49