Inventor
SATHIYANARAYANAN RAJESH
IN18 patents
⚠️ This page may combine multiple inventors who share the name “SATHIYANARAYANAN RAJESH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS9583486B1Feb 28, 2017
Stable work function for narrow-pitch devices
IBM20 citations92
US10170576B2Jan 1, 2019
Stable work function for narrow-pitch devices
IBM7 citations84
US9627484B1Apr 18, 2017
Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer
IBM7 citations84
US9735250B2Aug 15, 2017
Stable work function for narrow-pitch devices
IBM4 citations73
US9549044B1Jan 17, 2017
Data processing
IBM6 citations73
US9589635B2Mar 7, 2017
Semiconductor device with a stoichiometric gradient
IBM6 citations72
US9170165B2Oct 27, 2015
Workfunction modulation-based sensor to measure pressure and temperature
IBM2 citations62
US10366897B2Jul 30, 2019
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US10347494B2Jul 9, 2019
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US10319596B2Jun 11, 2019
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US9984883B2May 29, 2018
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US9972497B2May 15, 2018
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
IBM0 citations52
US10418505B2Sep 17, 2019
Aerodynamic solar pods
IBM0 citations51
US9705021B2Jul 11, 2017
Aerodynamic solar pods
IBM0 citations51
APPLIED MATERIALS INC
4 patentsUS10608097B2Mar 31, 2020
Low thickness dependent work-function nMOS integration for metal gate
APPLIED MATERIALS INC2 citations73
US12469715B2Nov 11, 2025
Dry etching with etch byproduct self-cleaning
APPLIED MATERIALS INC0 citations62
US11049722B2Jun 29, 2021
Methods and materials for modifying the threshold voltage of metal oxide stacks
APPLIED MATERIALS INC0 citations62
US10615041B2Apr 7, 2020
Methods and materials for modifying the threshold voltage of metal oxide stacks
APPLIED MATERIALS INC0 citations51