Inventor

LABELLE CATHERINE B

US17 patents

⚠️ This page may combine multiple inventors who share the name “LABELLE CATHERINE B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LABELLE CATHERINE B

GLOBALFOUNDRIES INC

Fin cut with alternating two color fin hardmask

Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devices

Hybrid fin cutting processes for FinFET semiconductor devices

Formation of semiconductor structures employing selective removal of fins

Dual-strained nanowire and FinFET devices with dielectric isolation

Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices

Raised fin structures and methods of fabrication

Raised fin structures and methods of fabrication

Methods of performing fin cut etch processes for FinFET semiconductor devices and the resulting devices

FinFET devices having fins with a tapered configuration and methods of fabricating the same

ADVANCED MICRO DEVICES INC

Scatterometry with grating to observe resist removal rate during etch

Situ monitoring of microloading using scatterometry with variable pitch gratings

Effect of substrate surface treatment on 193 NM resist processing

BONSER DOUGLAS

Formation of FinFET gate spacer

Formation of FinFET gate spacer

GLOBALFOUNDRIES US INC

Interconnect structures of semiconductor devices having a via structure through an upper conductive line

IBM

Wimpy and nominal semiconductor device structures for vertical finFETs