Inventor

PRECHTL GERHARD

AT67 patents

⚠️ This page may combine multiple inventors who share the name “PRECHTL GERHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PRECHTL GERHARD

INFINEON TECHNOLOGIES AUSTRIA AG

Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits

Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure

High-electron-mobility transistor having a buried field plate

Active gate-source capacitance clamp for normally-off HEMT

Substrate structure, semiconductor component and method

Enhancement mode Group III nitride-based transistor device

High electron mobility transistor with doped semiconductor region in gate structure

Semiconductor device

Semiconductor wafer and method

Semiconductor device

Non-planar normally off compound semiconductor device

Semiconductor device

III-nitride bidirectional device

Group III-nitride-based enhancement mode transistor having a heterojunction fin structure

Field effect power transistor metalization having a comb structure with contact fingers

Semiconductor device and method

Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device

Semiconductor probe test card with integrated hall measurement features

Enhancement mode transistor device

Semiconductor device and method

High electron mobility transistor with doped semiconductor region in gate structure

High electron mobility transistor with doped semiconductor region in gate structure

High-electron-mobility transistor having a buried field plate

System and method for depletion mode and enhancement mode transistors

Group III nitride-based transistor device

Methods of forming substrate structures and semiconductor components

Surface treatment of semiconductor substrate using free radical state fluorine particles

Water and ion barrier for III-V semiconductor devices

Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakage

Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage

High electron mobility transistor with carrier injection mitigation gate structure

Electronic component

Method of manufacturing HEMTs with an integrated Schottky diode

INFINEON TECHNOLOGIES AUSTRIA

Group III-nitride-based enhancement mode transistor

Group III-nitride-based enhancement mode transistor

High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode

Method of manufacturing a high breakdown voltage III-nitride device

SWAROVSKI AG

Artificial gemstone, natural gemstone ornamental object made of glass

Artificial gemstone, natural gemstone ornamental object made of glass

Artificial gemstone, natural gemstone ornamental object made of glass

Gemstone

PRECHTL GERHARD

Integrated Schottky diode for HEMTs

Contact structures for compound semiconductor devices

OSTERMAIER CLEMENS

Multi-channel HEMT

High breakdown voltage III-nitride device

INFINEON TECHNOLOGIES AG

Integrated circuit and bipolar transistor

Integrated circuit with bipolar transistor

SUSWAROVSKI AG

Artificial gemstone, natural gemstone ornamental object made of glass

DOW CORING GMBH

Component for vehicle interiors

INFINEON TECHNOLOGIES AMERICAS CORP

Interdigit device on leadframe for evenly distributed current flow