Inventor
KIM EUNG-GWAN
KR2 patents
Patents
2 patentsUS9935017B2Apr 3, 2018
Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation
SAMSUNG ELECTRONICS CO LTD5 citations81
US9659827B2May 23, 2017
Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation
SAMSUNG ELECTRONICS CO LTD9 citations81