Inventor
CHEN CHUNG-ZEN
TW72 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHUNG-ZEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ELITE SEMICONDUCTOR ESMT
22 patentsUS7630267B2Dec 8, 2009
Temperature detector in an integrated circuit
ELITE SEMICONDUCTOR ESMT13 citations93
US7009882B2Mar 7, 2006
Bit switch voltage drop compensation during programming in nonvolatile memory
ELITE SEMICONDUCTOR ESMT33 citations93
US7443230B2Oct 28, 2008
Charge pump circuit
ELITE SEMICONDUCTOR ESMT22 citations92
US7359248B2Apr 15, 2008
Methods for programming and reading NAND flash memory device and page buffer performing the same
ELITE SEMICONDUCTOR ESMT23 citations92
US6421295B1Jul 16, 2002
DRAM circuit and its sub-word line driver
ELITE SEMICONDUCTOR ESMT48 citations88
US7804326B1Sep 28, 2010
Voltage level shifter
ELITE SEMICONDUCTOR ESMT11 citations84
US7643352B2Jan 5, 2010
Method for erasing flash memory
ELITE SEMICONDUCTOR ESMT8 citations84
US7547941B2Jun 16, 2009
NAND non-volatile two-bit memory and fabrication method
ELITE SEMICONDUCTOR ESMT11 citations84
US7466611B1Dec 16, 2008
Selection method of bit line redundancy repair and apparatus performing the same
ELITE SEMICONDUCTOR ESMT9 citations84
US7403427B2Jul 22, 2008
Method and apparatus for reducing stress in word line driver transistors during erasure
ELITE SEMICONDUCTOR ESMT11 citations84
US7391651B2Jun 24, 2008
Method for programming NAND flash memory device and page buffer performing the same
ELITE SEMICONDUCTOR ESMT14 citations84
US7336543B2Feb 26, 2008
Non-volatile memory device with page buffer having dual registers and methods using the same
ELITE SEMICONDUCTOR ESMT18 citations84
US7263004B2Aug 28, 2007
Method and apparatus for determining sensing timing of flash memory
ELITE SEMICONDUCTOR ESMT14 citations84
US7023734B2Apr 4, 2006
Overerase correction in flash EEPROM memory
ELITE SEMICONDUCTOR ESMT13 citations84
US7924610B2Apr 12, 2011
Method for conducting over-erase correction
ELITE SEMICONDUCTOR ESMT7 citations78
US7705631B2Apr 27, 2010
Level shifter circuit
ELITE SEMICONDUCTOR ESMT7 citations74
US7606952B2Oct 20, 2009
Method for operating serial flash memory
ELITE SEMICONDUCTOR ESMT7 citations74
US7200043B2Apr 3, 2007
Nonvolatile memory using a two-step cell verification process
ELITE SEMICONDUCTOR ESMT6 citations74
US8031550B2Oct 4, 2011
Voltage regulator circuit for a memory circuit
ELITE SEMICONDUCTOR ESMT4 citations63
US7847617B2Dec 7, 2010
Charge pump and method for operating the same
ELITE SEMICONDUCTOR ESMT3 citations63
US7525849B2Apr 28, 2009
Flash memory with sequential programming
ELITE SEMICONDUCTOR ESMT5 citations63
US7305513B2Dec 4, 2007
Circuit for preventing nonvolatile memory from over-erase
ELITE SEMICONDUCTOR ESMT3 citations63
VANGUARD INT SEMICONDUCT CORP
10 patentsUS5702968ADec 30, 1997
Method for fabricating a honeycomb shaped capacitor
VANGUARD INT SEMICONDUCT CORP63 citations96
US5652459AJul 29, 1997
Moisture guard ring for integrated circuit applications
VANGUARD INT SEMICONDUCT CORP58 citations96
US5538924AJul 23, 1996
Method of forming a moisture guard ring for integrated circuit applications
VANGUARD INT SEMICONDUCT CORP48 citations96
US6394882B1May 28, 2002
CMP method and substrate carrier head for polishing with improved uniformity
VANGUARD INT SEMICONDUCT CORP32 citations93
US6262588B1Jul 17, 2001
Bias monitor for semiconductor burn-in
VANGUARD INT SEMICONDUCT CORP30 citations93
US5869861AFeb 9, 1999
Coaxial capacitor for DRAM memory cell
VANGUARD INT SEMICONDUCT CORP34 citations93
US5760453AJun 2, 1998
Moisture barrier layers for integrated circuit applications
VANGUARD INT SEMICONDUCT CORP32 citations93
US5712206AJan 27, 1998
Method of forming moisture barrier layers for integrated circuit applications
VANGUARD INT SEMICONDUCT CORP41 citations93
US5550076AAug 27, 1996
Method of manufacture of coaxial capacitor for dram memory cell and cell manufactured thereby
VANGUARD INT SEMICONDUCT CORP39 citations93
US6137301AOct 24, 2000
EPROM used as a voltage monitor for semiconductor burn-in
VANGUARD INT SEMICONDUCT CORP14 citations74
WINBOND ELECTRONICS CORP
5 patentsUS10445011B2Oct 15, 2019
Flash memory storage apparatus
WINBOND ELECTRONICS CORP3 citations73
US12531124B2Jan 20, 2026
Programming voltage supply and programming voltage generating method
WINBOND ELECTRONICS CORP0 citations63
US12094543B2Sep 17, 2024
Memory and sense amplifying device thereof
WINBOND ELECTRONICS CORP0 citations63
US11983417B2May 14, 2024
Power-on read circuit
WINBOND ELECTRONICS CORP0 citations63
US10305482B2May 28, 2019
Voltage level shifter
WINBOND ELECTRONICS CORP2 citations63
CHEN CHUNG-ZEN
3 patentsUS8189396B2May 29, 2012
Word line driver in a hierarchical NOR flash memory
CHEN CHUNG-ZEN6 citations82
US8405375B2Mar 26, 2013
Intermittently activated bandgap reference circuit
CHEN CHUNG-ZEN6 citations73
US8456922B2Jun 4, 2013
Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltage
CHEN CHUNG-ZEN3 citations72
IND TECH RES INST
2 patentsCHEN CHUNG ZEN
2 patentsMOSAID TECHNOLOGIES INC
2 patentsIND TECHNOLOGY RESEARCH INSTIT
1 patentELITE SEMICONDUCTOR MEMORY
1 patentELITE SEMICONDUTOR MEMORY TECH
1 patentCONVERSANT INTELLECTUAL PROPERTY MAN INC
1 patentShowing the top 50 of 72 patents by PatentIndex Score.