Inventor

JUNG SEONG-OOK

KR96 patents

⚠️ This page may combine multiple inventors who share the name “JUNG SEONG-OOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUNG SEONG-OOK

QUALCOMM INC

Adaptive voltage scaling for an electronics device

System, apparatus, and method for sense amplifiers

Controlled value reference signal of resistance based memory circuit

Spin transfer torque magnetoresistive random access memory and design methods

Method and apparatus of estimating circuit delay

Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits

System and method of sensing a memory cell

Dual write wordline memory cell

System and method to provide a reference cell using magnetic tunnel junction cells

Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methods

Process variation tolerant memory design

Memory device with configurable delay tracking

Error correction and decoding

Dual mode sensing scheme

SRAM read preferred bit cell with write assist circuit

System and method of power distribution control of an integrated circuit

Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation

Testing a memory device having field effect transistors subject to threshold voltage shifts caused by bias temperature instability

Seven-transistor static random-access memory bitcell with reduced read disturbance

Constant sensing current for reading resistive memory

System, apparatus, and method for an offset cancelling single ended sensing circuit

Offset canceling dual stage sensing circuit

NMOS-offset canceling current-latched sense amplifier

Error correction and decoding

JUNG SEONG-OOK

Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size

Latching circuit

Split path sensing circuit

Low sensing current non-volatile flip-flop

Static noise margin estimation

Low-power 5T SRAM with improved stability and reduced bitcell size

Sensing circuit

Resistance-based memory with reduced voltage input/output device

T RAM INC

Bit line control and sense amplification for TCCT-based memory cells

Single data line sensing scheme for TCCT-based memory cells

Circuit and method for implementing a write operation with TCCT-based memory cells

Bit line control and sense amplification for TCCT-based memory cells

Single data line sensing scheme for TCCT-based memory cells

SAMSUNG ELECTRONICS CO LTD

Memory device with address translation for skipping failed memory blocks

Non-volatile memory device and programming method thereof

Static random access memory device including write assist circuit and writing method thereof

Delay locked loop, electronic device including the same, and method of operating the same

Video ram method for outputting serial data

QUALCOMM TECHNOLOGIES INC

Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells

Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages

Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin

RYU KYUNGHO

Invalid write prevention for STT-MRAM array

T RAM SEMICONDUCTOR INC

Single data line sensing scheme for TCCT-based memory cells

UNIV YONSEI IACF

Delay locked loop and method of generating clock

QUALCOMM TECH INCORPORATED

Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods

INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIV

Apparatus for measuring distance using two-step tracking based on SPAD sensor and method thereof