Inventor

PAN SAMUEL C

TW76 patents

⚠️ This page may combine multiple inventors who share the name “PAN SAMUEL C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PAN SAMUEL C

TAIWAN SEMICONDUCTOR MFG CO LTD

Negative capacitance field effect transistor with charged dielectric material

Field effect transistors and methods of forming same

Multi-channel field effect transistors using 2D-material

FET device having a vertical channel in a 2D material layer

Field effect transistors and methods of forming same

FinFET semiconductor device having fins with stronger structural strength

Semiconductor device and manufacturing method thereof

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Method for forming stressor, semiconductor device having stressor, and method for forming the same

Charged-particle-beam patterning without resist

Semiconductor devices comprising 2D-materials and methods of manufacture thereof

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

Method of forming a semiconductor device using layered etching and repairing of damaged portions

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

Method of forming a semiconductor device using layered etching and repairing of damaged portions

Method of forming a semiconductor device using layered etching and repairing of damaged portions

Methods of graphene growth and related structures

Methods of graphene growth and related structures

Impact ionization semiconductor device and manufacturing method thereof

Impact ionization semiconductor device and manufacturing method thereof

Structure and formation method of semiconductor device structure

Graphene transistor and related methods

Hybrid TFET-MOSFET circuit design

Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height

Method for forming stressor, semiconductor device having stressor, and method for forming the same

2D crystal hetero-structures and manufacturing methods thereof

Method for forming stressor, semiconductor device having stressor, and method for forming the same

Antifuse array and method of forming antifuse using anodic oxidation

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Semiconductor memory device

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

Semiconductor device and manufacturing method thereof

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

Device with doped phosphorene and method for doping phosphorene

Multi-channel field effect transistors using 2D-material

Charged-particle-beam patterning without resist

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Antifuse array and method of forming antifuse using anodic oxidation

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Semiconductor devices comprising 2D-materials and methods of manufacture thereof

Antifuse array and method of forming antifuse using anodic oxidation

MACRONIX INT CO LTD

Method of making nonvolatile memory devices having reduced resistance diffusion regions

Erasing method for non-volatile memory

Method for forming a contoured floating gate cell

Method for forming a v-shaped floating gate

Planarization method using anisotropic wet etching

PAN SAMUEL C

Liquid-liquid extraction apparatus including fibrous strand packing