Inventor
MORIYAMA MIKI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “MORIYAMA MIKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
18 patentsUS7723743B2May 25, 2010
Semiconductor light emitting element
TOYODA GOSEI KK12 citations83
US9567693B2Feb 14, 2017
Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate
TOYODA GOSEI KK2 citations71
US7190076B2Mar 13, 2007
Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same
TOYODA GOSEI KK2 citations62
US10329687B2Jun 25, 2019
Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method
TOYODA GOSEI KK1 citations61
US7550782B2Jun 23, 2009
Semiconductor device having an undercoat layer and method of manufacturing the same
TOYODA GOSEI KK4 citations60
US9388506B2Jul 12, 2016
Semiconductor crystal removal apparatus and production method for semiconductor crystal
TOYODA GOSEI KK0 citations52
US8962456B2Feb 24, 2015
Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device
TOYODA GOSEI KK0 citations52
US7824929B2Nov 2, 2010
Method for producing group III nitride-based compound semiconductor
TOYODA GOSEI KK0 citations52
US7564062B2Jul 21, 2009
Electrode for p-type SiC
TOYODA GOSEI KK0 citations52
US7164207B2Jan 16, 2007
Wiring structure for semiconductor device
TOYODA GOSEI KK0 citations52
US9932688B2Apr 3, 2018
Method for producing group III nitride semiconductor single crystal
TOYODA GOSEI KK0 citations51
US8350284B2Jan 8, 2013
Light emitting element and light emitting device
TOYODA GOSEI KK1 citations51
US11280024B2Mar 22, 2022
Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere
TOYODA GOSEI KK0 citations50
US9153439B2Oct 6, 2015
Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate
TOYODA GOSEI KK0 citations48
US7968216B2Jun 28, 2011
Internal gear pump
TOYODA GOSEI KK0 citations46
US10693032B2Jun 23, 2020
Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal
TOYODA GOSEI KK0 citations39
US9691610B2Jun 27, 2017
Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate
TOYODA GOSEI KK0 citations38
US9903042B2Feb 27, 2018
Method for producing group III nitride semiconductor using a crucible
TOYODA GOSEI KK0 citations35
WADA SATOSHI
4 patentsUS8759123B2Jun 24, 2014
Method of manufacturing LED lamp
WADA SATOSHI15 citations84
US8609444B2Dec 17, 2013
Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting element
WADA SATOSHI4 citations62
US9087969B2Jul 21, 2015
Light-emitting device
WADA SATOSHI1 citations52
US8773017B2Jul 8, 2014
Glass-sealed LED lamp and manufacturing method of the same
WADA SATOSHI0 citations52