P

Inventor

MORIYAMA MIKI

JP32 patents
⚠️ This page may combine multiple inventors who share the name “MORIYAMA MIKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOYODA GOSEI KK

18 patents
US7723743B2May 25, 2010

Semiconductor light emitting element

TOYODA GOSEI KK12 citations83
US9567693B2Feb 14, 2017

Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate

TOYODA GOSEI KK2 citations71
US7190076B2Mar 13, 2007

Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same

TOYODA GOSEI KK2 citations62
US10329687B2Jun 25, 2019

Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method

TOYODA GOSEI KK1 citations61
US7550782B2Jun 23, 2009

Semiconductor device having an undercoat layer and method of manufacturing the same

TOYODA GOSEI KK4 citations60
US9388506B2Jul 12, 2016

Semiconductor crystal removal apparatus and production method for semiconductor crystal

TOYODA GOSEI KK0 citations52
US8962456B2Feb 24, 2015

Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

TOYODA GOSEI KK0 citations52
US7824929B2Nov 2, 2010

Method for producing group III nitride-based compound semiconductor

TOYODA GOSEI KK0 citations52
US7564062B2Jul 21, 2009

Electrode for p-type SiC

TOYODA GOSEI KK0 citations52
US7164207B2Jan 16, 2007

Wiring structure for semiconductor device

TOYODA GOSEI KK0 citations52
US9932688B2Apr 3, 2018

Method for producing group III nitride semiconductor single crystal

TOYODA GOSEI KK0 citations51
US8350284B2Jan 8, 2013

Light emitting element and light emitting device

TOYODA GOSEI KK1 citations51
US11280024B2Mar 22, 2022

Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere

TOYODA GOSEI KK0 citations50
US9153439B2Oct 6, 2015

Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate

TOYODA GOSEI KK0 citations48
US7968216B2Jun 28, 2011

Internal gear pump

TOYODA GOSEI KK0 citations46
US10693032B2Jun 23, 2020

Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal

TOYODA GOSEI KK0 citations39
US9691610B2Jun 27, 2017

Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate

TOYODA GOSEI KK0 citations38
US9903042B2Feb 27, 2018

Method for producing group III nitride semiconductor using a crucible

TOYODA GOSEI KK0 citations35

WADA SATOSHI

4 patents

KOBE STEEL LTD

2 patents

MORIYAMA MIKI

2 patents

FUKUDA TETSUO

1 patent

GOSHONOO KOICHI

1 patent

ACRORAD CO LTD

1 patent

TOYOTA GOSEI CO LTD

1 patent

TOTANI SHINGO

1 patent

YAMAGUCHI SEIJI

1 patent