Inventor
BAUMGARTL JOHANNES
AT36 patents
⚠️ This page may combine multiple inventors who share the name “BAUMGARTL JOHANNES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
19 patentsUS9647083B2May 9, 2017
Producing a semiconductor device by epitaxial growth
INFINEON TECHNOLOGIES AG6 citations82
US11011409B2May 18, 2021
Devices with backside metal structures and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations72
US10325804B2Jun 18, 2019
Method of wafer thinning and realizing backside metal structures
INFINEON TECHNOLOGIES AG3 citations72
US9960076B2May 1, 2018
Devices with backside metal structures and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations61
US6660637B2Dec 9, 2003
Process for chemical mechanical polishing
INFINEON TECHNOLOGIES AG4 citations59
US10566198B2Feb 18, 2020
Doping method
INFINEON TECHNOLOGIES AG0 citations52
US10367067B2Jul 30, 2019
Semiconductor device having an oxygen diffusion barrier
INFINEON TECHNOLOGIES AG0 citations52
US10121859B2Nov 6, 2018
Method of manufacturing semiconductor devices with transistor cells and semiconductor device
INFINEON TECHNOLOGIES AG0 citations52
US9972488B2May 15, 2018
Method of reducing defects in an epitaxial layer
INFINEON TECHNOLOGIES AG0 citations52
US9954065B2Apr 24, 2018
Method of forming a semiconductor device and semiconductor device
INFINEON TECHNOLOGIES AG0 citations52
US9601368B2Mar 21, 2017
Semiconductor device comprising an oxygen diffusion barrier and manufacturing method
INFINEON TECHNOLOGIES AG0 citations52
US10535553B2Jan 14, 2020
Devices with backside metal structures and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations51
US11149351B2Oct 19, 2021
Apparatus and method for chemical vapor deposition process for semiconductor substrates
INFINEON TECHNOLOGIES AG0 citations50
US9698247B2Jul 4, 2017
Method of producing a semiconductor arrangement
INFINEON TECHNOLOGIES AG0 citations50
US10199372B2Feb 5, 2019
Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures
INFINEON TECHNOLOGIES AG0 citations48
US10074566B2Sep 11, 2018
Semiconductor device and methods for forming a plurality of semiconductor devices
INFINEON TECHNOLOGIES AG0 citations41
US9875926B2Jan 23, 2018
Substrates with buried isolation layers and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations41
US9406564B2Aug 2, 2016
Singulation through a masking structure surrounding expitaxial regions
INFINEON TECHNOLOGIES AG0 citations41
US9859378B2Jan 2, 2018
Semiconductor device with reduced emitter efficiency
INFINEON TECHNOLOGIES AG0 citations39
INFINEON TECHNOLOGIES AUSTRIA AG
11 patentsUS10923432B2Feb 16, 2021
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US9711357B1Jul 18, 2017
Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure
INFINEON TECHNOLOGIES AUSTRIA AG6 citations72
US9406763B2Aug 2, 2016
Stress-reduced field-effect semiconductor device and method for forming therefor
INFINEON TECHNOLOGIES AUSTRIA AG1 citations63
US9941365B2Apr 10, 2018
Method for forming a stress-reduced field-effect semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9449847B2Sep 20, 2016
Method for manufacturing a semiconductor device by thermal treatment with hydrogen
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9449968B2Sep 20, 2016
Method for manufacturing a semiconductor device and a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10600740B2Mar 24, 2020
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10236258B2Mar 19, 2019
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10243066B2Mar 26, 2019
Producing a semiconductor device by epitaxial growth
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US9768273B2Sep 19, 2017
Method of forming a trench using epitaxial lateral overgrowth
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US9478639B2Oct 25, 2016
Electrode-aligned selective epitaxy method for vertical power devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50