P

Inventor

BAUMGARTL JOHANNES

AT36 patents
⚠️ This page may combine multiple inventors who share the name “BAUMGARTL JOHANNES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

19 patents
US9647083B2May 9, 2017

Producing a semiconductor device by epitaxial growth

INFINEON TECHNOLOGIES AG6 citations82
US11011409B2May 18, 2021

Devices with backside metal structures and methods of formation thereof

INFINEON TECHNOLOGIES AG1 citations72
US10325804B2Jun 18, 2019

Method of wafer thinning and realizing backside metal structures

INFINEON TECHNOLOGIES AG3 citations72
US9960076B2May 1, 2018

Devices with backside metal structures and methods of formation thereof

INFINEON TECHNOLOGIES AG1 citations61
US6660637B2Dec 9, 2003

Process for chemical mechanical polishing

INFINEON TECHNOLOGIES AG4 citations59
US10566198B2Feb 18, 2020

Doping method

INFINEON TECHNOLOGIES AG0 citations52
US10367067B2Jul 30, 2019

Semiconductor device having an oxygen diffusion barrier

INFINEON TECHNOLOGIES AG0 citations52
US10121859B2Nov 6, 2018

Method of manufacturing semiconductor devices with transistor cells and semiconductor device

INFINEON TECHNOLOGIES AG0 citations52
US9972488B2May 15, 2018

Method of reducing defects in an epitaxial layer

INFINEON TECHNOLOGIES AG0 citations52
US9954065B2Apr 24, 2018

Method of forming a semiconductor device and semiconductor device

INFINEON TECHNOLOGIES AG0 citations52
US9601368B2Mar 21, 2017

Semiconductor device comprising an oxygen diffusion barrier and manufacturing method

INFINEON TECHNOLOGIES AG0 citations52
US10535553B2Jan 14, 2020

Devices with backside metal structures and methods of formation thereof

INFINEON TECHNOLOGIES AG0 citations51
US11149351B2Oct 19, 2021

Apparatus and method for chemical vapor deposition process for semiconductor substrates

INFINEON TECHNOLOGIES AG0 citations50
US9698247B2Jul 4, 2017

Method of producing a semiconductor arrangement

INFINEON TECHNOLOGIES AG0 citations50
US10199372B2Feb 5, 2019

Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures

INFINEON TECHNOLOGIES AG0 citations48
US10074566B2Sep 11, 2018

Semiconductor device and methods for forming a plurality of semiconductor devices

INFINEON TECHNOLOGIES AG0 citations41
US9875926B2Jan 23, 2018

Substrates with buried isolation layers and methods of formation thereof

INFINEON TECHNOLOGIES AG0 citations41
US9406564B2Aug 2, 2016

Singulation through a masking structure surrounding expitaxial regions

INFINEON TECHNOLOGIES AG0 citations41
US9859378B2Jan 2, 2018

Semiconductor device with reduced emitter efficiency

INFINEON TECHNOLOGIES AG0 citations39

INFINEON TECHNOLOGIES AUSTRIA AG

11 patents
US10923432B2Feb 16, 2021

Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark

INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US9711357B1Jul 18, 2017

Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure

INFINEON TECHNOLOGIES AUSTRIA AG6 citations72
US9406763B2Aug 2, 2016

Stress-reduced field-effect semiconductor device and method for forming therefor

INFINEON TECHNOLOGIES AUSTRIA AG1 citations63
US9941365B2Apr 10, 2018

Method for forming a stress-reduced field-effect semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9449847B2Sep 20, 2016

Method for manufacturing a semiconductor device by thermal treatment with hydrogen

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9449968B2Sep 20, 2016

Method for manufacturing a semiconductor device and a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10600740B2Mar 24, 2020

Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10236258B2Mar 19, 2019

Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10243066B2Mar 26, 2019

Producing a semiconductor device by epitaxial growth

INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US9768273B2Sep 19, 2017

Method of forming a trench using epitaxial lateral overgrowth

INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US9478639B2Oct 25, 2016

Electrode-aligned selective epitaxy method for vertical power devices

INFINEON TECHNOLOGIES AUSTRIA AG0 citations50

INFINEON TECHNOLOGIES AUSTRIA

2 patents

SCHULZE HANS-JOACHIM

2 patents

SEDLMAIER STEFAN

1 patent

AHRENS CARSTEN

1 patent