Inventor
MEZOESI GABOR
AT12 patents
Patents
12 patentsUS10923432B2Feb 16, 2021
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US10811529B2Oct 20, 2020
Transistor device with gate resistor
INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
US9711357B1Jul 18, 2017
Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure
INFINEON TECHNOLOGIES AUSTRIA AG6 citations72
US11329126B2May 10, 2022
Method of manufacturing a superjunction semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10411126B2Sep 10, 2019
Semiconductor device having a first through contact structure in ohmic contact with the gate electrode
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10374032B2Aug 6, 2019
Field-effect semiconductor device having N and P-doped pillar regions
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10957788B2Mar 23, 2021
Semiconductor devices with superjunction structures
INFINEON TECHNOLOGIES AUSTRIA AG0 citations54
US10600740B2Mar 24, 2020
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10236258B2Mar 19, 2019
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US11374125B2Jun 28, 2022
Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US10658497B2May 19, 2020
Method for manufacturing semiconductor devices with superjunction structures
INFINEON TECHNOLOGIES AUSTRIA AG0 citations43
US10211300B2Feb 19, 2019
Method of forming a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations41