Inventor
SHIN JUNG HYUN
KR17 patents
⚠️ This page may combine multiple inventors who share the name “SHIN JUNG HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS5502336AMar 26, 1996
Semiconductor device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD23 citations92
US5073510ADec 17, 1991
Fabrication method of contact window in semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations91
US5005103AApr 2, 1991
Method of manufacturing folded capacitors in semiconductor and folded capacitors fabricated thereby
SAMSUNG ELECTRONICS CO LTD30 citations91
US7145196B2Dec 5, 2006
Asymmetric field effect transistor
SAMSUNG ELECTRONICS CO LTD10 citations73
US5818091AOct 6, 1998
Semiconductor device with selectively patterned connection pad layer for increasing a contact margin
SAMSUNG ELECTRONICS CO LTD15 citations73
US5591670AJan 7, 1997
Method of manufacturing a semiconductor device having self aligned contact hole
SAMSUNG ELECTRONICS CO LTD15 citations73
US5484739AJan 16, 1996
Method for manufacturing a CMOS semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations73
US7439102B2Oct 21, 2008
Semiconductor fuse box and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7750432B2Jul 6, 2010
Semiconductor fuse box and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7442613B2Oct 28, 2008
Methods of forming an asymmetric field effect transistor
SAMSUNG ELECTRONICS CO LTD1 citations51
US7154160B2Dec 26, 2006
Semiconductor fuse box and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
SK HYNIX INC
3 patentsUS12113650B2Oct 8, 2024
Semiconductor apparatus including calibration circuit
SK HYNIX INC0 citations60
US11792052B2Oct 17, 2023
Semiconductor apparatus including calibration circuit
SK HYNIX INC0 citations60
US10847194B2Nov 24, 2020
Input/output circuit and memory device having the same
SK HYNIX INC0 citations50