Inventor
SUGAWARA TAKUYA
JP30 patents
⚠️ This page may combine multiple inventors who share the name “SUGAWARA TAKUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
20 patentsUS7226874B2Jun 5, 2007
Substrate processing method
TOKYO ELECTRON LTD24 citations92
US6897149B2May 24, 2005
Method of producing electronic device material
TOKYO ELECTRON LTD24 citations92
US6313047B2Nov 6, 2001
MOCVD method of tantalum oxide film
TOKYO ELECTRON LTD27 citations92
US7560396B2Jul 14, 2009
Material for electronic device and process for producing the same
TOKYO ELECTRON LTD10 citations84
US7226848B2Jun 5, 2007
Substrate treating method and production method for semiconductor device
TOKYO ELECTRON LTD11 citations84
US7446052B2Nov 4, 2008
Method for forming insulation film
TOKYO ELECTRON LTD10 citations82
US7429539B2Sep 30, 2008
Nitriding method of gate oxide film
TOKYO ELECTRON LTD7 citations74
US7250375B2Jul 31, 2007
Substrate processing method and material for electronic device
TOKYO ELECTRON LTD9 citations74
US7232772B2Jun 19, 2007
Substrate processing method
TOKYO ELECTRON LTD7 citations74
US7217659B2May 15, 2007
Process for producing materials for electronic device
TOKYO ELECTRON LTD5 citations73
US7517751B2Apr 14, 2009
Substrate treating method
TOKYO ELECTRON LTD2 citations63
US8021987B2Sep 20, 2011
Method of modifying insulating film
TOKYO ELECTRON LTD3 citations62
US7968472B2Jun 28, 2011
Film forming method and film forming apparatus
TOKYO ELECTRON LTD5 citations62
US7662236B2Feb 16, 2010
Method for forming insulation film
TOKYO ELECTRON LTD3 citations62
US7655574B2Feb 2, 2010
Method of modifying insulating film
TOKYO ELECTRON LTD3 citations62
US7622402B2Nov 24, 2009
Method for forming underlying insulation film
TOKYO ELECTRON LTD2 citations62
US7955922B2Jun 7, 2011
Manufacturing method of fin-type field effect transistor
TOKYO ELECTRON LTD3 citations61
US7517818B2Apr 14, 2009
Method for forming a nitrided germanium-containing layer using plasma processing
TOKYO ELECTRON LTD3 citations61
US7759598B2Jul 20, 2010
Substrate treating method and production method for semiconductor device
TOKYO ELECTRON LTD0 citations52
US7517812B2Apr 14, 2009
Method and system for forming a nitrided germanium-containing layer using plasma processing
TOKYO ELECTRON LTD0 citations50