Inventor
LIU ERIC CHIH-FANG
US33 patents
⚠️ This page may combine multiple inventors who share the name “LIU ERIC CHIH-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
27 patentsUS11651965B2May 16, 2023
Method and system for capping of cores for self-aligned multiple patterning
TOKYO ELECTRON LTD2 citations73
US11121027B2Sep 14, 2021
High aspect ratio via etch using atomic layer deposition protection layer
TOKYO ELECTRON LTD4 citations71
US11424123B2Aug 23, 2022
Forming a semiconductor feature using atomic layer etch
TOKYO ELECTRON LTD1 citations62
US11333968B2May 17, 2022
Method for reducing lithography defects and pattern transfer
TOKYO ELECTRON LTD0 citations62
US10978307B2Apr 13, 2021
Deposition process
TOKYO ELECTRON LTD0 citations62
US12506005B2Dec 23, 2025
Methods and structures for increasing stability of soft or organic features
TOKYO ELECTRON LTD0 citations61
US12341009B2Jun 24, 2025
Variable hardness amorphous carbon mask
TOKYO ELECTRON LTD0 citations60
US12148624B2Nov 19, 2024
Wet etch process and method to control fin height and channel area in a fin field effect transistor (FinFET)
TOKYO ELECTRON LTD0 citations59
US12100598B2Sep 24, 2024
Methods for planarizing a substrate using a combined wet etch and chemical mechanical polishing (CMP) process
TOKYO ELECTRON LTD1 citations59
US12009211B2Jun 11, 2024
Method for highly anisotropic etching of titanium oxide spacer using selective top-deposition
TOKYO ELECTRON LTD0 citations58
US12265326B2Apr 1, 2025
Method for reducing lithography defects and pattern transfer
TOKYO ELECTRON LTD0 citations56
US11417526B2Aug 16, 2022
Multiple patterning processes
TOKYO ELECTRON LTD0 citations52
US10790154B2Sep 29, 2020
Method of line cut by multi-color patterning technique
TOKYO ELECTRON LTD0 citations52
US10734228B2Aug 4, 2020
Manufacturing methods to apply stress engineering to self-aligned multi-patterning (SAMP) processes
TOKYO ELECTRON LTD0 citations52
US12588262B2Mar 24, 2026
Sacrificial gate capping layer for gate protection during source/drain contact opening
TOKYO ELECTRON LTD0 citations51
US12568677B2Mar 3, 2026
Method of self-aligned dielectric wall formation for forksheet application
TOKYO ELECTRON LTD0 citations51
US12564027B2Feb 24, 2026
Top-down self-alignment of vias in a semiconductor device for sub-22NM pitch metals
TOKYO ELECTRON LTD0 citations51
US11557479B2Jan 17, 2023
Methods for EUV inverse patterning in processing of microelectronic workpieces
TOKYO ELECTRON LTD0 citations51
US10700009B2Jun 30, 2020
Ruthenium metal feature fill for interconnects
TOKYO ELECTRON LTD0 citations51
US12237216B2Feb 25, 2025
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD0 citations50
US11756790B2Sep 12, 2023
Method for patterning a dielectric layer
TOKYO ELECTRON LTD0 citations50
US10049892B2Aug 14, 2018
Method for processing photoresist materials and structures
TOKYO ELECTRON LTD1 citations50
US12482702B2Nov 25, 2025
Wet etch process and methods to form air gaps between metal interconnects
TOKYO ELECTRON LTD0 citations48
US12451354B2Oct 21, 2025
Double patterning method of patterning a substrate
TOKYO ELECTRON LTD0 citations48
US12451353B2Oct 21, 2025
Double hardmasks for self-aligned multi-patterning processes
TOKYO ELECTRON LTD0 citations45
US10453686B2Oct 22, 2019
In-situ spacer reshaping for self-aligned multi-patterning methods and systems
TOKYO ELECTRON LTD0 citations41
US10170329B2Jan 1, 2019
Spacer formation for self-aligned multi-patterning technique
TOKYO ELECTRON LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
4 patentsUS8900937B2Dec 2, 2014
FinFET device structure and methods of making same
TAIWAN SEMICONDUCTOR MFG15 citations84
US9034706B2May 19, 2015
FinFETs with regrown source/drain and methods for forming the same
TAIWAN SEMICONDUCTOR MFG8 citations83
US9263551B2Feb 16, 2016
Simultaneous formation of source/drain openings with different profiles
TAIWAN SEMICONDUCTOR MFG9 citations82
US9379220B2Jun 28, 2016
FinFET device structure and methods of making same
TAIWAN SEMICONDUCTOR MFG0 citations52