P

Inventor

LIU ERIC CHIH-FANG

US33 patents
⚠️ This page may combine multiple inventors who share the name “LIU ERIC CHIH-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

27 patents
US11651965B2May 16, 2023

Method and system for capping of cores for self-aligned multiple patterning

TOKYO ELECTRON LTD2 citations73
US11121027B2Sep 14, 2021

High aspect ratio via etch using atomic layer deposition protection layer

TOKYO ELECTRON LTD4 citations71
US11424123B2Aug 23, 2022

Forming a semiconductor feature using atomic layer etch

TOKYO ELECTRON LTD1 citations62
US11333968B2May 17, 2022

Method for reducing lithography defects and pattern transfer

TOKYO ELECTRON LTD0 citations62
US10978307B2Apr 13, 2021

Deposition process

TOKYO ELECTRON LTD0 citations62
US12506005B2Dec 23, 2025

Methods and structures for increasing stability of soft or organic features

TOKYO ELECTRON LTD0 citations61
US12341009B2Jun 24, 2025

Variable hardness amorphous carbon mask

TOKYO ELECTRON LTD0 citations60
US12148624B2Nov 19, 2024

Wet etch process and method to control fin height and channel area in a fin field effect transistor (FinFET)

TOKYO ELECTRON LTD0 citations59
US12100598B2Sep 24, 2024

Methods for planarizing a substrate using a combined wet etch and chemical mechanical polishing (CMP) process

TOKYO ELECTRON LTD1 citations59
US12009211B2Jun 11, 2024

Method for highly anisotropic etching of titanium oxide spacer using selective top-deposition

TOKYO ELECTRON LTD0 citations58
US12265326B2Apr 1, 2025

Method for reducing lithography defects and pattern transfer

TOKYO ELECTRON LTD0 citations56
US11417526B2Aug 16, 2022

Multiple patterning processes

TOKYO ELECTRON LTD0 citations52
US10790154B2Sep 29, 2020

Method of line cut by multi-color patterning technique

TOKYO ELECTRON LTD0 citations52
US10734228B2Aug 4, 2020

Manufacturing methods to apply stress engineering to self-aligned multi-patterning (SAMP) processes

TOKYO ELECTRON LTD0 citations52
US12588262B2Mar 24, 2026

Sacrificial gate capping layer for gate protection during source/drain contact opening

TOKYO ELECTRON LTD0 citations51
US12568677B2Mar 3, 2026

Method of self-aligned dielectric wall formation for forksheet application

TOKYO ELECTRON LTD0 citations51
US12564027B2Feb 24, 2026

Top-down self-alignment of vias in a semiconductor device for sub-22NM pitch metals

TOKYO ELECTRON LTD0 citations51
US11557479B2Jan 17, 2023

Methods for EUV inverse patterning in processing of microelectronic workpieces

TOKYO ELECTRON LTD0 citations51
US10700009B2Jun 30, 2020

Ruthenium metal feature fill for interconnects

TOKYO ELECTRON LTD0 citations51
US12237216B2Feb 25, 2025

Method for filling recessed features in semiconductor devices with a low-resistivity metal

TOKYO ELECTRON LTD0 citations50
US11756790B2Sep 12, 2023

Method for patterning a dielectric layer

TOKYO ELECTRON LTD0 citations50
US10049892B2Aug 14, 2018

Method for processing photoresist materials and structures

TOKYO ELECTRON LTD1 citations50
US12482702B2Nov 25, 2025

Wet etch process and methods to form air gaps between metal interconnects

TOKYO ELECTRON LTD0 citations48
US12451354B2Oct 21, 2025

Double patterning method of patterning a substrate

TOKYO ELECTRON LTD0 citations48
US12451353B2Oct 21, 2025

Double hardmasks for self-aligned multi-patterning processes

TOKYO ELECTRON LTD0 citations45
US10453686B2Oct 22, 2019

In-situ spacer reshaping for self-aligned multi-patterning methods and systems

TOKYO ELECTRON LTD0 citations41
US10170329B2Jan 1, 2019

Spacer formation for self-aligned multi-patterning technique

TOKYO ELECTRON LTD0 citations41

TAIWAN SEMICONDUCTOR MFG

4 patents

TAIWAN SEMICONDUCTOR MFG CO LTD

2 patents