Inventor
SINGH KAUSHAL K
US29 patents
⚠️ This page may combine multiple inventors who share the name “SINGH KAUSHAL K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
20 patentsUS7651955B2Jan 26, 2010
Method for forming silicon-containing materials during a photoexcitation deposition process
APPLIED MATERIALS INC533 citations99
US7648927B2Jan 19, 2010
Method for forming silicon-containing materials during a photoexcitation deposition process
APPLIED MATERIALS INC497 citations99
US6190233B1Feb 20, 2001
Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
APPLIED MATERIALS INC277 citations98
US5990000ANov 23, 1999
Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
APPLIED MATERIALS INC270 citations97
US7601652B2Oct 13, 2009
Method for treating substrates and films with photoexcitation
APPLIED MATERIALS INC486 citations96
US7645339B2Jan 12, 2010
Silicon-containing layer deposition with silicon compounds
APPLIED MATERIALS INC14 citations92
US7540920B2Jun 2, 2009
Silicon-containing layer deposition with silicon compounds
APPLIED MATERIALS INC31 citations92
US9879341B2Jan 30, 2018
Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials
APPLIED MATERIALS INC4 citations73
US7262116B2Aug 28, 2007
Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
APPLIED MATERIALS INC9 citations73
US10204764B2Feb 12, 2019
Methods for forming a metal silicide interconnection nanowire structure
APPLIED MATERIALS INC2 citations72
US9613859B2Apr 4, 2017
Direct deposition of nickel silicide nanowire
APPLIED MATERIALS INC5 citations72
US11881411B2Jan 23, 2024
High pressure annealing process for metal containing materials
APPLIED MATERIALS INC0 citations62
US10998200B2May 4, 2021
High pressure annealing process for metal containing materials
APPLIED MATERIALS INC0 citations62
US10930472B2Feb 23, 2021
Methods for forming a metal silicide interconnection nanowire structure
APPLIED MATERIALS INC0 citations62
US10879177B2Dec 29, 2020
PVD deposition and anneal of multi-layer metal-dielectric film
APPLIED MATERIALS INC1 citations61
US9812328B2Nov 7, 2017
Methods for forming low resistivity interconnects
APPLIED MATERIALS INC0 citations52
US9780223B2Oct 3, 2017
Gallium arsenide based materials used in thin film transistor applications
APPLIED MATERIALS INC1 citations52
US9905723B2Feb 27, 2018
Methods for plasma activation of evaporated precursors in a process chamber
APPLIED MATERIALS INC1 citations51
US9450135B2Sep 20, 2016
Plasma enhanced thermal evaporator
APPLIED MATERIALS INC1 citations51
US10593592B2Mar 17, 2020
Laminate and core shell formation of silicide nanowire
APPLIED MATERIALS INC0 citations41
SINGH KAUSHAL K
5 patentsUS8387557B2Mar 5, 2013
Method for forming silicon-containing materials during a photoexcitation deposition process
SINGH KAUSHAL K15 citations92
US8415556B2Apr 9, 2013
Copper delafossite transparent P-type semiconductor thin film devices
SINGH KAUSHAL K8 citations81
US8846437B2Sep 30, 2014
High efficiency thin film transistor device with gallium arsenide layer
SINGH KAUSHAL K9 citations78
US7396743B2Jul 8, 2008
Low temperature epitaxial growth of silicon-containing films using UV radiation
SINGH KAUSHAL K7 citations72
US8822259B2Sep 2, 2014
Methods for enhancing light absorption during PV applications
SINGH KAUSHAL K0 citations50