Inventor
MARTY MICHEL
FR63 patents
⚠️ This page may combine multiple inventors who share the name “MARTY MICHEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
33 patentsUS6031445AFeb 29, 2000
Transformer for integrated circuits
ST MICROELECTRONICS SA317 citations98
US6828646B2Dec 7, 2004
Isolating trench and manufacturing process
ST MICROELECTRONICS SA96 citations97
US6465317B2Oct 15, 2002
Process for producing a bipolar transistor with self-aligned emitter and extrinsic base
ST MICROELECTRONICS SA38 citations93
US6177717B1Jan 23, 2001
Low-noise vertical bipolar transistor and corresponding fabrication process
ST MICROELECTRONICS SA62 citations93
US6972451B2Dec 6, 2005
Trench capacitor in a substrate with two floating electrodes independent from the substrate
ST MICROELECTRONICS SA29 citations92
US6265275B1Jul 24, 2001
Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base
ST MICROELECTRONICS SA38 citations92
US6100595AAug 8, 2000
Semiconductor device having optoelectronic remote signal-exchange means
ST MICROELECTRONICS SA24 citations92
US6081030AJun 27, 2000
Semiconductor device having separated exchange means
ST MICROELECTRONICS SA33 citations92
US5976898ANov 2, 1999
Localization of defects of a metallic layer of a semiconductor circuit
ST MICROELECTRONICS SA22 citations92
US6551891B1Apr 22, 2003
Process for fabricating a self-aligned vertical bipolar transistor
ST MICROELECTRONICS SA21 citations91
US6316818B1Nov 13, 2001
Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process
ST MICROELECTRONICS SA30 citations91
US6136640AOct 24, 2000
Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit
ST MICROELECTRONICS SA17 citations86
US7687833B2Mar 30, 2010
Component containing a baw filter
ST MICROELECTRONICS SA11 citations83
US9520435B2Dec 13, 2016
Image sensor illuminated and connected on its back side
ST MICROELECTRONICS SA15 citations82
US6436782B2Aug 20, 2002
Process for fabricating a self-aligned double-polysilicon bipolar transistor
ST MICROELECTRONICS SA10 citations72
US6656812B1Dec 2, 2003
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process
ST MICROELECTRONICS SA8 citations70
US9985119B2May 29, 2018
Image sensor with reduced spectral and optical crosstalk and method for making the image sensor
ST MICROELECTRONICS SA2 citations69
US9685472B2Jun 20, 2017
Image sensor with reduced spectral and optical crosstalk and method for making the image sensor
ST MICROELECTRONICS SA4 citations69
US9231014B2Jan 5, 2016
Back side illumination photodiode of high quantum efficiency
ST MICROELECTRONICS SA2 citations63
US7691727B2Apr 6, 2010
Method for manufacturing an integrated circuit with fully depleted and partially depleted transistors
ST MICROELECTRONICS SA2 citations63
US7476574B2Jan 13, 2009
Method for forming an integrated circuit semiconductor substrate
ST MICROELECTRONICS SA2 citations62
US7456071B2Nov 25, 2008
Method for forming a strongly-conductive buried layer in a semiconductor substrate
ST MICROELECTRONICS SA6 citations62
US6642096B2Nov 4, 2003
Bipolar transistor manufacturing
ST MICROELECTRONICS SA6 citations62
US7470559B2Dec 30, 2008
Semiconductor component comprising a buried mirror
ST MICROELECTRONICS SA6 citations61
US6653182B2Nov 25, 2003
Process for forming deep and shallow insulative regions of an integrated circuit
ST MICROELECTRONICS SA3 citations61
US7115465B2Oct 3, 2006
Method for manufacturing a bipolar transistor
ST MICROELECTRONICS SA5 citations58
US9397128B2Jul 19, 2016
Process for forming a stack of different materials, and device comprising this stack
ST MICROELECTRONICS SA2 citations56
US9530817B2Dec 27, 2016
Back side illumination photodiode of high quantum efficiency
ST MICROELECTRONICS SA0 citations52
US9214485B2Dec 15, 2015
Thick multilayer interference filter having a lower metal layer located within an interconnect region
ST MICROELECTRONICS SA0 citations52
US6902970B2Jun 7, 2005
Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors
ST MICROELECTRONICS SA0 citations52
US6423996B1Jul 23, 2002
Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit
ST MICROELECTRONICS SA0 citations52
US9219095B2Dec 22, 2015
Method for producing an optical filter in an integrated circuit, and corresponding integrated circuit
ST MICROELECTRONICS SA0 citations51
US8963273B2Feb 24, 2015
Back-side illuminated image sensor with a junction insulation
ST MICROELECTRONICS SA0 citations51
ST MICROELECTRONICS CROLLES 2
3 patentsUS9299865B2Mar 29, 2016
Spad photodiode of high quantum efficiency
ST MICROELECTRONICS CROLLES 25 citations72
US9171973B2Oct 27, 2015
Method for producing an integrated imaging device with front face illumination comprising at least one metal optical filter, and corresponding device
ST MICROELECTRONICS CROLLES 22 citations60
US8975730B2Mar 10, 2015
Method for protection of a layer of a vertical stack and corresponding device
ST MICROELECTRONICS CROLLES 20 citations51
ONERA (OFF NAT AEROSPATIALE)
3 patentsUS5486242AJan 23, 1996
Niobium or tantalum based high specific strength inter metallic compounds and alloys
ONERA (OFF NAT AEROSPATIALE)13 citations69
US4601874AJul 22, 1986
Process for forming a titanium base alloy with small grain size by powder metallurgy
ONERA (OFF NAT AEROSPATIALE)14 citations68
US6176949B1Jan 23, 2001
Titanium aluminide which can be used at high temperature
ONERA (OFF NAT AEROSPATIALE)5 citations60
SNECMA
2 patentsMARTY MICHEL
2 patentsCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
1 patentEFCIS
1 patentKONINKL PHILIPS ELECTRONICS NV
1 patentFABRICATION DE CIRCUITS INTEGR
1 patentARMINES
1 patentPRIMA JENS
1 patentST MICROELECTRONICS CROLLES 2 SAS
1 patentShowing the top 50 of 63 patents by PatentIndex Score.