Inventor
BATEMAN BRUCE LYNN
US20 patents
⚠️ This page may combine multiple inventors who share the name “BATEMAN BRUCE LYNN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
16 patentsUS9691480B2Jun 27, 2017
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP12 citations92
US9390796B2Jul 12, 2016
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP15 citations92
US9312307B2Apr 12, 2016
Vertical cross point arrays for ultra high density memory applications
UNITY SEMICONDUCTOR CORP13 citations92
US9117495B2Aug 25, 2015
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP21 citations92
US9870823B2Jan 16, 2018
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP4 citations84
US9691821B2Jun 27, 2017
Vertical cross-point arrays for ultra-high-density memory applications
UNITY SEMICONDUCTOR CORP4 citations83
US9029827B2May 12, 2015
Planar resistive memory integration
UNITY SEMICONDUCTOR CORP9 citations81
US10566056B2Feb 18, 2020
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP2 citations73
US10229739B2Mar 12, 2019
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP2 citations73
US11367751B2Jun 21, 2022
Vertical cross-point arrays for ultra-high-density memory applications
UNITY SEMICONDUCTOR CORP2 citations72
US11849593B2Dec 19, 2023
Vertical cross-point arrays for ultra-high-density memory applications
UNITY SEMICONDUCTOR CORP0 citations62
US11087841B2Aug 10, 2021
Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
UNITY SEMICONDUCTOR CORP0 citations62
US9837149B2Dec 5, 2017
Low read current architecture for memory
UNITY SEMICONDUCTOR CORP0 citations52
US9368200B2Jun 14, 2016
Low read current architecture for memory
UNITY SEMICONDUCTOR CORP0 citations52
US10790334B2Sep 29, 2020
Vertical cross-point arrays for ultra-high-density memory applications
UNITY SEMICONDUCTOR CORP0 citations51
US9570459B2Feb 14, 2017
Vertical gate NAND memory devices
UNITY SEMICONDUCTOR CORP1 citations51