Inventor
WEN CHI-YUAN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “WEN CHI-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS9985072B1May 29, 2018
CMOS image sensor with dual damascene grid design having absorption enhancement structure
TAIWAN SEMICONDUCTOR MFG CO LTD21 citations94
US10553733B2Feb 4, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US10211244B2Feb 19, 2019
Image sensor device with reflective structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10153319B2Dec 11, 2018
CMOS image sensor with dual damascene grid design having absorption enhancement structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11393937B2Jul 19, 2022
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10879406B2Dec 29, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10056427B1Aug 21, 2018
Front side illuminated image sensor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10784150B2Sep 22, 2020
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11990493B2May 21, 2024
Image sensor device with reflective structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342372B2May 24, 2022
Image sensor device with reflective layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9984918B2May 29, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10734427B2Aug 4, 2020
Method for forming image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10707361B2Jul 7, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276427B2Apr 30, 2019
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12368070B2Jul 22, 2025
LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49