P

Inventor

WEN CHI-YUAN

TW17 patents
⚠️ This page may combine multiple inventors who share the name “WEN CHI-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US9985072B1May 29, 2018

CMOS image sensor with dual damascene grid design having absorption enhancement structure

TAIWAN SEMICONDUCTOR MFG CO LTD21 citations94
US10553733B2Feb 4, 2020

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US10211244B2Feb 19, 2019

Image sensor device with reflective structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10153319B2Dec 11, 2018

CMOS image sensor with dual damascene grid design having absorption enhancement structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11393937B2Jul 19, 2022

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10879406B2Dec 29, 2020

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10056427B1Aug 21, 2018

Front side illuminated image sensor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10784150B2Sep 22, 2020

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11990493B2May 21, 2024

Image sensor device with reflective structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342372B2May 24, 2022

Image sensor device with reflective layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9984918B2May 29, 2018

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10734427B2Aug 4, 2020

Method for forming image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10707361B2Jul 7, 2020

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276427B2Apr 30, 2019

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12368070B2Jul 22, 2025

LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

LIN TING-YI

2 patents