Inventor
CHEN MENG-KU
TW16 patents
⚠️ This page may combine multiple inventors who share the name “CHEN MENG-KU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
8 patentsUS8822290B2Sep 2, 2014
FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG12 citations84
US9029246B2May 12, 2015
Methods of forming epitaxial structures
TAIWAN SEMICONDUCTOR MFG4 citations73
US9184289B2Nov 10, 2015
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG3 citations63
US9397169B2Jul 19, 2016
Epitaxial structures
TAIWAN SEMICONDUCTOR MFG1 citations52
US9356102B2May 31, 2016
Double stepped semiconductor substrate
TAIWAN SEMICONDUCTOR MFG0 citations52
US9224815B2Dec 29, 2015
Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impurities
TAIWAN SEMICONDUCTOR MFG0 citations52
US9166035B2Oct 20, 2015
Delta doping layer in MOSFET source/drain region
TAIWAN SEMICONDUCTOR MFG1 citations52
US9099311B2Aug 4, 2015
Double stepped semiconductor substrate
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS12068395B2Aug 20, 2024
Method for forming an undoped region under a source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11211470B2Dec 28, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10923566B2Feb 16, 2021
Semiconductor structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978641B2May 7, 2024
Wafer bonding method and semiconductor structure obtained by the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9997397B2Jun 12, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9735261B2Aug 15, 2017
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660031B2May 23, 2017
Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9437699B2Sep 6, 2016
Method of forming nanowires
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51