Inventor
TSAI JI-YIN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “TSAI JI-YIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS11316030B2Apr 26, 2022
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12255102B2Mar 18, 2025
Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159925B2Dec 3, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068395B2Aug 20, 2024
Method for forming an undoped region under a source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11862709B2Jan 2, 2024
Inner spacer structure and methods of forming such
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11437497B2Sep 6, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11616133B2Mar 28, 2023
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12588258B2Mar 24, 2026
Stacked transistor isolation features and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US9887290B2Feb 6, 2018
Silicon germanium source/drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12324190B2Jun 3, 2025
Method and multi-channel devices with anti-punch-through features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12550418B2Feb 10, 2026
Etch stop layer for removal of substrate in stacking transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46