Inventor

YU JENG-WEI

TW21 patents

⚠️ This page may combine multiple inventors who share the name “YU JENG-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YU JENG-WEI

TAIWAN SEMICONDUCTOR MFG CO LTD

Confined source/drain epitaxy regions and method forming same

Confined source/drain epitaxy regions and method forming same

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

Semiconductor device and method of forming same

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

Transistors with stacked semiconductor layers as channels

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

Method for forming an undoped region under a source/drain

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

Transistors with stacked semiconductor layers as channels

Epitaxy regions with large landing areas for contact plugs

Epitaxy regions with large landing areas for contact plugs

Fin field-effect transistor device and method of forming

Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same

Confined source/drain epitaxy regions and method forming same

OPTO TECH CORP

Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure

Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure

Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure

PENG LUNG-HAN

Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates

Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation

LIN CHEN-YEN

Light emitting diode with large viewing angle and fabricating method thereof