Inventor
SHEN TSUNG-HAN
TW3 patents
Patents
3 patentsUS11610982B2Mar 21, 2023
Void elimination for gap-filling in high-aspect ratio trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12100751B2Sep 24, 2024
Void elimination for gap-filling in high-aspect ratio trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12431356B2Sep 30, 2025
Metal gate structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59