P

Inventor

LIN JIA-MING

TW16 patents

Patents

16 patents
US9691766B1Jun 27, 2017

Fin field effect transistor and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations82
US11967504B2Apr 23, 2024

Gate structures in transistor devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11715762B2Aug 1, 2023

Transistor gate structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658252B2May 19, 2020

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10269664B2Apr 23, 2019

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854713B2Dec 1, 2020

Method for forming trench structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9871100B2Jan 16, 2018

Trench structure of semiconductor device having uneven nitrogen distribution liner

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11610982B2Mar 21, 2023

Void elimination for gap-filling in high-aspect ratio trenches

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12575343B2Mar 10, 2026

Gate structures in transistor devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464786B2Nov 4, 2025

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218199B2Feb 4, 2025

Transistor gate structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957545B2Mar 23, 2021

Method for manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12100751B2Sep 24, 2024

Void elimination for gap-filling in high-aspect ratio trenches

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10861701B2Dec 8, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9824943B2Nov 21, 2017

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9991154B2Jun 5, 2018

Method for fabricating a fin field effect transistor and a shallow trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations30