Inventor
LEE WEI-CHIN
TW24 patents
⚠️ This page may combine multiple inventors who share the name “LEE WEI-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10304835B1May 28, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations97
US10504789B1Dec 10, 2019
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11532509B2Dec 20, 2022
Selective hybrid capping layer for metal gates of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502080B2Nov 15, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11121041B2Sep 14, 2021
Methods for threshold voltage tuning and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10868013B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10692770B2Jun 23, 2020
Geometry for threshold voltage tuning on semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10510756B1Dec 17, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510621B2Dec 17, 2019
Methods for threshold voltage tuning and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11610982B2Mar 21, 2023
Void elimination for gap-filling in high-aspect ratio trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12183629B2Dec 31, 2024
Selective hybrid capping layer for metal gates of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087637B2Sep 10, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935957B2Mar 19, 2024
Geometry for threshold voltage tuning on semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855098B2Dec 26, 2023
Semiconductor devices having dipole-inducing elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094828B2Aug 17, 2021
Geometry for threshold voltage tuning on semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10867864B2Dec 15, 2020
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12142531B2Nov 12, 2024
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11322411B2May 3, 2022
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302582B2Apr 12, 2022
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12100751B2Sep 24, 2024
Void elimination for gap-filling in high-aspect ratio trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12431356B2Sep 30, 2025
Metal gate structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
UNIV TSINGHUA
2 patentsUS7678633B2Mar 16, 2010
Method for forming substrates for MOS transistor components and its products
UNIV TSINGHUA1 citations46
US7235467B2Jun 26, 2007
Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate
UNIV TSINGHUA0 citations46