Inventor
LEE KUN-YU
TW18 patents
⚠️ This page may combine multiple inventors who share the name “LEE KUN-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS11967504B2Apr 23, 2024
Gate structures in transistor devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11699621B2Jul 11, 2023
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867869B2Dec 15, 2020
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10504795B2Dec 10, 2019
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12575343B2Mar 10, 2026
Gate structures in transistor devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342605B2Jun 24, 2025
Semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211752B2Jan 28, 2025
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688645B2Jun 27, 2023
Structure and formation method of semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11315838B2Apr 26, 2022
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171061B2Nov 9, 2021
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107897B2Aug 31, 2021
Methods of forming semiconductor devices and FinFET devices having shielding layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302631B2May 13, 2025
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923360B2Mar 5, 2024
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166074B2Dec 10, 2024
Gate structure in semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10367078B2Jul 30, 2019
Semiconductor devices and FinFET devices having shielding layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51