Inventor
PARK HYUN-KOOK
KR40 patents
⚠️ This page may combine multiple inventors who share the name “PARK HYUN-KOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS9171617B1Oct 27, 2015
Resistive memory device and method programming same
SAMSUNG ELECTRONICS CO LTD26 citations92
US9646685B2May 9, 2017
Resistive memory device, resistive memory, and operating method of the resistive memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9269430B1Feb 23, 2016
Memory device having cross point array structure, memory system, and method of operating memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9183932B1Nov 10, 2015
Resistive memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US9728252B2Aug 8, 2017
Resistive memory device with temperature compensation, resistive memory system, and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US9685227B2Jun 20, 2017
Control of memory device reading based on cell resistance
SAMSUNG ELECTRONICS CO LTD3 citations73
US9659645B2May 23, 2017
Resistive memory device and method of writing data
SAMSUNG ELECTRONICS CO LTD4 citations73
US9633726B2Apr 25, 2017
Resistive memory device, resistive memory system, and method of operating resistive memory device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9558822B2Jan 31, 2017
Resistive memory device and method of operating the resistive memory device
SAMSUNG ELECTRONICS CO LTD6 citations73
US9536605B2Jan 3, 2017
Resistive memory device and operating method
SAMSUNG ELECTRONICS CO LTD2 citations73
US9472275B2Oct 18, 2016
Method of operating memory device using different read conditions
SAMSUNG ELECTRONICS CO LTD5 citations73
US9437290B2Sep 6, 2016
Resistive memory device and operation
SAMSUNG ELECTRONICS CO LTD6 citations73
US9361974B2Jun 7, 2016
Resistive memory device and method of operating the same to reduce leakage current
SAMSUNG ELECTRONICS CO LTD3 citations73
US9269429B2Feb 23, 2016
Resistive memory device, resistive memory system, and method of operating resistive memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US9058874B2Jun 16, 2015
Sensing circuits and phase change memory devices including the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US9530494B2Dec 27, 2016
Memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9305608B2Apr 5, 2016
Memory device with reduced operating current
SAMSUNG ELECTRONICS CO LTD2 citations63
US9966132B2May 8, 2018
Method for programming a non-volatile memory device and a method for operating a system having the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9613697B2Apr 4, 2017
Resistive memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9570200B2Feb 14, 2017
Resistive memory device having memory cell arrays with multiple stack layers and bad-region managing circuit and method for managing short failure
SAMSUNG ELECTRONICS CO LTD0 citations52
US9558821B2Jan 31, 2017
Resistive memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9552878B2Jan 24, 2017
Resistive memory device and operating method
SAMSUNG ELECTRONICS CO LTD1 citations52
US8988929B2Mar 24, 2015
Nonvolatile memory device and related operating method
SAMSUNG ELECTRONICS CO LTD1 citations52
US10720209B2Jul 21, 2020
Memory device comprising resistance change material and method for driving the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10340000B2Jul 2, 2019
Operating method of memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10181348B2Jan 15, 2019
Memory device comprising resistance change material and method for driving the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10074426B2Sep 11, 2018
Memory device having resistance change material and operating method for the memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US10839903B2Nov 17, 2020
Resistive memory devices
SAMSUNG ELECTRONICS CO LTD0 citations42
PARK HYUN-KOOK
4 patentsUS9406359B2Aug 2, 2016
Memory devices, memory systems, and related operating methods
PARK HYUN-KOOK9 citations83
US9443586B2Sep 13, 2016
Nonvolatile memory device, memory system including the same and method for driving nonvolatile memory device
PARK HYUN-KOOK3 citations71
US9478285B2Oct 25, 2016
Cross-point memory device including multi-level cells and operating method thereof
PARK HYUN-KOOK1 citations51
US9589632B2Mar 7, 2017
Resistive memory device including column decoder and method of performing a bidirectional driving operation and providing appropriate biasing with respect to bit lines
PARK HYUN-KOOK0 citations40