P

Inventor

YOON CHI-WEON

KR64 patents
⚠️ This page may combine multiple inventors who share the name “YOON CHI-WEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

39 patents
US9514827B1Dec 6, 2016

Memory device, memory system and method of operating memory device

SAMSUNG ELECTRONICS CO LTD56 citations98
US9472282B2Oct 18, 2016

Resistive memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD69 citations98
US10909032B2Feb 2, 2021

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD6 citations84
US10671529B2Jun 2, 2020

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD4 citations84
US10600487B2Mar 24, 2020

Methods of erasing data in nonvolatile memory devices and nonvolatile memory devices performing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9508441B1Nov 29, 2016

Memory device and memory system

SAMSUNG ELECTRONICS CO LTD17 citations84
US9478290B1Oct 25, 2016

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US9269430B1Feb 23, 2016

Memory device having cross point array structure, memory system, and method of operating memory device

SAMSUNG ELECTRONICS CO LTD7 citations84
US7800944B2Sep 21, 2010

Nonvolatile semiconductor memory device and programming method thereof

SAMSUNG ELECTRONICS CO LTD9 citations84
US7539077B2May 26, 2009

Flash memory device having a data buffer and programming method of the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7602650B2Oct 13, 2009

Flash memory device and method for programming multi-level cells in the same

SAMSUNG ELECTRONICS CO LTD13 citations83
US7525838B2Apr 28, 2009

Flash memory device and method for programming multi-level cells in the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US8347183B2Jan 1, 2013

Flash memory device using ECC algorithm and method of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations82
US9633726B2Apr 25, 2017

Resistive memory device, resistive memory system, and method of operating resistive memory device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9437290B2Sep 6, 2016

Resistive memory device and operation

SAMSUNG ELECTRONICS CO LTD6 citations73
US9361974B2Jun 7, 2016

Resistive memory device and method of operating the same to reduce leakage current

SAMSUNG ELECTRONICS CO LTD3 citations73
US8693247B2Apr 8, 2014

Non-volatile memory device and method for programming the device, and memory system

SAMSUNG ELECTRONICS CO LTD4 citations73
US7474566B2Jan 6, 2009

Non-volatile memory device and method capable of re-verifying a verified memory cell

SAMSUNG ELECTRONICS CO LTD7 citations73
US10490289B2Nov 26, 2019

Voltage generator for a nonvolatile memory device, and a method of operating the voltage generator

SAMSUNG ELECTRONICS CO LTD3 citations71
US10170190B2Jan 1, 2019

Memory controller having reclaim controller and method of controlling operation of the memory controller

SAMSUNG ELECTRONICS CO LTD2 citations69
US11164637B2Nov 2, 2021

Methods of erasing data in nonvolatile memory devices and nonvolatile memory devices performing the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US11074978B2Jul 27, 2021

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations63
US10892019B2Jan 12, 2021

Methods of erasing data in nonvolatile memory devices and nonvolatile memory devices performing the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US10748621B2Aug 18, 2020

Memory device

SAMSUNG ELECTRONICS CO LTD1 citations63
US9881685B2Jan 30, 2018

Nonvolatile memory device, operating method thereof and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US9799404B2Oct 24, 2017

Memory device, memory system and method of operating memory device

SAMSUNG ELECTRONICS CO LTD1 citations63
US9530494B2Dec 27, 2016

Memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US9159443B2Oct 13, 2015

Nonvolatile memory device, operating method thereof and memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7599222B2Oct 6, 2009

Semiconductor memory device using pipelined-buffer programming and related method

SAMSUNG ELECTRONICS CO LTD5 citations63
US7580281B2Aug 25, 2009

Flash memory device with write protection

SAMSUNG ELECTRONICS CO LTD5 citations63
US7474587B2Jan 6, 2009

Flash memory device with rapid random access function and computing system including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7433244B2Oct 7, 2008

Flash memory device and related erase operation

SAMSUNG ELECTRONICS CO LTD6 citations63
US12147340B2Nov 19, 2024

Address scheduling methods for non-volatile memory devices with three- dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD0 citations62
US11681616B2Jun 20, 2023

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD0 citations62
US7782680B2Aug 24, 2010

Flash memory device having a verify data buffer capable of being employed as a program data buffer, and a method thereof

SAMSUNG ELECTRONICS CO LTD2 citations62
US7787305B2Aug 31, 2010

Flash memory devices and programming methods that vary programming conditions in response to a selected step increment

SAMSUNG ELECTRONICS CO LTD4 citations61
US10679702B2Jun 9, 2020

Memory device with voltage controller

SAMSUNG ELECTRONICS CO LTD0 citations52
US10566039B2Feb 18, 2020

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9947416B2Apr 17, 2018

Nonvolatile memory device, operating method thereof and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations52

YOON CHI-WEON

3 patents

YOON CHI WEON

1 patent

PARK JUNG-HOON

1 patent

PARK HYUN-KOOK

1 patent

PARK JUNE-HONG

1 patent

YUN JUNG-YUN

1 patent

NAM SANG WAN

1 patent

NAM SANG-WAN

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent

Showing the top 50 of 64 patents by PatentIndex Score.