Inventor
BYEON DAE-SEOK
KR131 patents
⚠️ This page may combine multiple inventors who share the name “BYEON DAE-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
44 patentsUS6717857B2Apr 6, 2004
Non-volatile semiconductor memory device with cache function and program, read, and page copy-back operations thereof
SAMSUNG ELECTRONICS CO LTD159 citations99
US9514827B1Dec 6, 2016
Memory device, memory system and method of operating memory device
SAMSUNG ELECTRONICS CO LTD56 citations98
US9472282B2Oct 18, 2016
Resistive memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD69 citations98
US7269068B2Sep 11, 2007
Flash memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD45 citations96
US10559362B2Feb 11, 2020
Non-volatile memory device and a read method thereof
SAMSUNG ELECTRONICS CO LTD22 citations94
US7843758B2Nov 30, 2010
Multi-chip package flash memory device and method for reading status data therefrom
SAMSUNG ELECTRONICS CO LTD23 citations93
US7596022B2Sep 29, 2009
Method for programming a multi-level non-volatile memory device
SAMSUNG ELECTRONICS CO LTD23 citations93
US7397706B2Jul 8, 2008
Methods of erasing flash memory devices by applying wordline bias voltages having multiple levels and related flash memory devices
SAMSUNG ELECTRONICS CO LTD37 citations93
US7272049B2Sep 18, 2007
Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
SAMSUNG ELECTRONICS CO LTD48 citations93
US7176747B2Feb 13, 2007
Multi-level high voltage generator
SAMSUNG ELECTRONICS CO LTD21 citations93
US7158418B2Jan 2, 2007
Non-volatile memory device capable of changing increment of program voltage to mode of operation
SAMSUNG ELECTRONICS CO LTD25 citations93
US7038949B2May 2, 2006
Non-volatile memory device capable of changing increment of program voltage according to mode of operation
SAMSUNG ELECTRONICS CO LTD40 citations93
US6975547B2Dec 13, 2005
Flash memory devices that support efficient memory locking operations and methods of operating flash memory devices
SAMSUNG ELECTRONICS CO LTD20 citations93
US9171617B1Oct 27, 2015
Resistive memory device and method programming same
SAMSUNG ELECTRONICS CO LTD26 citations92
US7499327B2Mar 3, 2009
NAND flash memory device having page buffer adapted to discharge bit line voltage during erase operation
SAMSUNG ELECTRONICS CO LTD20 citations92
US7110292B2Sep 19, 2006
Programming circuits and methods for multimode non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD22 citations92
US6882570B2Apr 19, 2005
Power detecting circuit and method for stable power-on reading of flash memory device using the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US6545910B2Apr 8, 2003
Non-volatile semiconductor memory device having word line defect check circuit
SAMSUNG ELECTRONICS CO LTD26 citations92
US6542406B2Apr 1, 2003
Row decoder of a NOR-type flash memory device
SAMSUNG ELECTRONICS CO LTD24 citations92
US9646685B2May 9, 2017
Resistive memory device, resistive memory, and operating method of the resistive memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9514813B2Dec 6, 2016
Resistive memory device, resistive memory system, and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US9508441B1Nov 29, 2016
Memory device and memory system
SAMSUNG ELECTRONICS CO LTD17 citations84
US9478290B1Oct 25, 2016
Memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US9449686B2Sep 20, 2016
Resistive memory device, resistive memory system and method of operating the resistive memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US9367417B2Jun 14, 2016
Nonvolatile memory device including dummy wordline, memory system, and method of operating memory system
SAMSUNG ELECTRONICS CO LTD10 citations84
US9269430B1Feb 23, 2016
Memory device having cross point array structure, memory system, and method of operating memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9183932B1Nov 10, 2015
Resistive memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US8045380B2Oct 25, 2011
Flash memory device and program method of flash memory device using different voltages
SAMSUNG ELECTRONICS CO LTD7 citations84
US7916540B2Mar 29, 2011
Non-volatile memory devices and systems including bad blocks address re-mapped and methods of operating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7911850B2Mar 22, 2011
Method of programming flash memory device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7852682B2Dec 14, 2010
Flash memory device and program method of flash memory device using different voltages
SAMSUNG ELECTRONICS CO LTD11 citations84
US7768831B2Aug 3, 2010
Flash memory device and method of controlling flash memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US7697342B2Apr 13, 2010
Flash memory device and related high voltage generating circuit
SAMSUNG ELECTRONICS CO LTD8 citations84
US7668019B2Feb 23, 2010
Non-volatile memory device and erasing method thereof
SAMSUNG ELECTRONICS CO LTD12 citations84
US7508705B2Mar 24, 2009
Method for programming a multi-level non-volatile memory device
SAMSUNG ELECTRONICS CO LTD19 citations84
US7439797B2Oct 21, 2008
Semiconductor device including a high voltage generation circuit and method of generating a high voltage
SAMSUNG ELECTRONICS CO LTD16 citations84
US7272047B2Sep 18, 2007
Wordline voltage generating circuit including a voltage dividing circuit for reducing effects of parasitic capacitance
SAMSUNG ELECTRONICS CO LTD11 citations84
US7190618B2Mar 13, 2007
Semiconductor device for reducing coupling noise
SAMSUNG ELECTRONICS CO LTD10 citations84
US7154789B2Dec 26, 2006
High-voltage generator circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US6590442B2Jul 8, 2003
Voltage boosting circuit for an integrated circuit device
SAMSUNG ELECTRONICS CO LTD13 citations84
US6888756B2May 3, 2005
Low-voltage non-volatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD14 citations79
US7567460B2Jul 28, 2009
Method of programming flash memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7349256B2Mar 25, 2008
Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
SAMSUNG ELECTRONICS CO LTD7 citations74
US11295818B2Apr 5, 2022
Non-volatile memory device, operating method thereof, and storage device having the same
SAMSUNG ELECTRONICS CO LTD2 citations73
LEE SEUNG-JAE
2 patentsNAM SANG-WAN
1 patentYOON CHI-WEON
1 patentPARK HYUN-KOOK
1 patentLEE JEONG GIL
1 patentShowing the top 50 of 131 patents by PatentIndex Score.