Inventor

DOORNBOS GERBEN

BE158 patents

⚠️ This page may combine multiple inventors who share the name “DOORNBOS GERBEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DOORNBOS GERBEN

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device including back side power supply circuit

Semiconductor device including back side power supply circuit

Multiple-stacked semiconductor nanowires and source/drain spacers

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

Localized heating in laser annealing process

Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS

Semiconductor device and manufacturing method thereof

Gate all-around semiconductor device including a first nanowire structure and a second nanowire structure

Method of manufacturing a gate-all-around semiconductor device

Method for manufacturing horizontal-gate-all-around devices with different number of nanowires

Method of manufacturing a semiconductor device and a semiconductor device

Gate all-around semiconductor device and manufacturing method thereof

Nanowire CMOS structure and formation methods

FinFET with channel backside passivation layer device and method

Integrated chip having a buried power rail

Semiconductor device and method for forming the same

Semiconductor device and method for manufacturing the same

Ferroelectric channel field effect transistor

Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

Gate all around semiconductor structure with diffusion break

Semiconductor device including back side power supply circuit

Crystalline semiconductor layer formed in BEOL processes

Protrusion field-effect transistor and methods of making the same

Ferroelectric channel field effect transistor

Semiconductor device and manufacturing method thereof

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor structure with diffusion break and method

Field effect transistor using carbon nanotubes

Crystalline semiconductor layer formed in BEOL processes

Intercalated metal/dielectric structure for nonvolatile memory devices

Wafers for use in aligning nanotubes and methods of making and using the same

Semiconductor device including an epitaxial layer wrapping around the nanowires

Tunnel field-effect transistor and method for forming the same

Semiconductor device and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG

Multi-threshold voltage FETs

Device with a strained Fin

FinFET drive strength modification

DOORNBOS GERBEN

Fin field effect transistor layout for stress optimization

Fin field effect transistor (finFET)

BHUWALKA KRISHNA KUMAR

Split-channel transistor and methods for forming the same

Tunnel FET and methods for forming the same

NXP BV

Semiconductor devices and methods of manufacture thereof

Tunnel field effect transistor

MERELLE THOMAS

finFET drive strength modification

VANLEENHOVE ANJA MONIQUE

Double patterning for lithography to increase feature spatial density

VAN DAL MARK

Strained channel field effect transistor

BHUWALKA KRISHNA

Vertical tunnel field effect transistor (FET)