Inventor
LIAO YI-BO
TW37 patents
Patents
37 patentsUS11227917B1Jan 18, 2022
Nano-sheet-based devices with asymmetric source and drain configurations
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11251308B2Feb 15, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11757042B2Sep 12, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11621195B2Apr 4, 2023
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11532627B2Dec 20, 2022
Source/drain contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11309240B2Apr 19, 2022
Conductive rail structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11264508B2Mar 1, 2022
Leakage prevention structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11031298B2Jun 8, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11658119B2May 23, 2023
Backside signal interconnection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12347748B2Jul 1, 2025
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12598779B2Apr 7, 2026
Gate-all-around device with protective dielectric layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520577B2Jan 6, 2026
Complementary field effect transistor with hybrid nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12506078B2Dec 23, 2025
Semiconductor devices with front side to backside conductive paths and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426327B2Sep 23, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12419103B2Sep 16, 2025
Dielectric walls for complementary field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12394706B2Aug 19, 2025
Device with gate-to-drain via and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389641B2Aug 12, 2025
Field effect transistor with air spacer and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376366B2Jul 29, 2025
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349409B2Jul 1, 2025
Semiconductor device having a gate contact on a low-k liner
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230572B2Feb 18, 2025
Backside signal interconnection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211790B2Jan 28, 2025
Conductive rail structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148837B2Nov 19, 2024
Semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094938B2Sep 17, 2024
Semiconductor device with low resistances and methods of forming such
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11996332B2May 28, 2024
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948989B2Apr 2, 2024
Gate-all-around device with protective dielectric layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855224B2Dec 26, 2023
Leakage prevention structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11837538B2Dec 5, 2023
Conductive rail structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705488B2Jul 18, 2023
Nano-sheet-based devices with asymmetric source and drain configurations
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532715B2Dec 20, 2022
Source/drain contacts for semiconductor devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532519B2Dec 20, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282935B2Mar 22, 2022
Gate-all-around device with protective dielectric layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11088251B2Aug 10, 2021
Source/drain contacts for semiconductor devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119271B1Oct 15, 2024
Backside gate contact, backside gate etch stop layer, and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12334350B2Jun 17, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12363992B2Jul 15, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12266601B2Apr 1, 2025
Semiconductor device structure with backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12142649B2Nov 12, 2024
Semiconductor structure with conductive carbon layer and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50