Inventor
HOLLOWAY THOMAS C
21 patents
⚠️ This page may combine multiple inventors who share the name “HOLLOWAY THOMAS C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
20 patentsUS4657628AApr 14, 1987
Process for patterning local interconnects
TEXAS INSTRUMENTS INC213 citations99
US4804636AFeb 14, 1989
Process for making integrated circuits having titanium nitride triple interconnect
TEXAS INSTRUMENTS INC244 citations98
US4821085AApr 11, 1989
VLSI local interconnect structure
TEXAS INSTRUMENTS INC111 citations97
US5989962ANov 23, 1999
Semiconductor device having dual gate and method of formation
TEXAS INSTRUMENTS INC56 citations96
US5302539AApr 12, 1994
VLSI interconnect method and structure
TEXAS INSTRUMENTS INC65 citations96
US4931411AJun 5, 1990
Integrated circuit process with TiN-gate transistor
TEXAS INSTRUMENTS INC97 citations96
US4845047AJul 4, 1989
Threshold adjustment method for an IGFET
TEXAS INSTRUMENTS INC53 citations96
US4811078AMar 7, 1989
Integrated circuit device and process with tin capacitors
TEXAS INSTRUMENTS INC65 citations96
US4746219AMay 24, 1988
Local interconnect
TEXAS INSTRUMENTS INC68 citations96
US4690730ASep 1, 1987
Oxide-capped titanium silicide formation
TEXAS INSTRUMENTS INC87 citations96
US4676866AJun 30, 1987
Process to increase tin thickness
TEXAS INSTRUMENTS INC67 citations96
US4112575ASep 12, 1978
Fabrication methods for the high capacity ram cell
TEXAS INSTRUMENTS INC57 citations96
US6222251B1Apr 24, 2001
Variable threshold voltage gate electrode for higher performance mosfets
TEXAS INSTRUMENTS INC42 citations92
US6040249AMar 21, 2000
Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy
TEXAS INSTRUMENTS INC39 citations92
US4814854AMar 21, 1989
Integrated circuit device and process with tin-gate transistor
TEXAS INSTRUMENTS INC47 citations92
US4811076AMar 7, 1989
Device and process with doubled capacitors
TEXAS INSTRUMENTS INC52 citations92
US4354896AOct 19, 1982
Formation of submicron substrate element
TEXAS INSTRUMENTS INC44 citations92
US6037230AMar 14, 2000
Method to reduce diode capacitance of short-channel MOSFETS
TEXAS INSTRUMENTS INC17 citations84
US6072715AJun 6, 2000
Memory circuit and method of construction
TEXAS INSTRUMENTS INC9 citations74
US6087268AJul 11, 2000
Method to reduce boron diffusion through gate oxide using sidewall spacers
TEXAS INSTRUMENTS INC1 citations52