P

Inventor

HOLLOWAY THOMAS C

21 patents
⚠️ This page may combine multiple inventors who share the name “HOLLOWAY THOMAS C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

20 patents
US4657628AApr 14, 1987

Process for patterning local interconnects

TEXAS INSTRUMENTS INC213 citations99
US4804636AFeb 14, 1989

Process for making integrated circuits having titanium nitride triple interconnect

TEXAS INSTRUMENTS INC244 citations98
US4821085AApr 11, 1989

VLSI local interconnect structure

TEXAS INSTRUMENTS INC111 citations97
US5989962ANov 23, 1999

Semiconductor device having dual gate and method of formation

TEXAS INSTRUMENTS INC56 citations96
US5302539AApr 12, 1994

VLSI interconnect method and structure

TEXAS INSTRUMENTS INC65 citations96
US4931411AJun 5, 1990

Integrated circuit process with TiN-gate transistor

TEXAS INSTRUMENTS INC97 citations96
US4845047AJul 4, 1989

Threshold adjustment method for an IGFET

TEXAS INSTRUMENTS INC53 citations96
US4811078AMar 7, 1989

Integrated circuit device and process with tin capacitors

TEXAS INSTRUMENTS INC65 citations96
US4746219AMay 24, 1988

Local interconnect

TEXAS INSTRUMENTS INC68 citations96
US4690730ASep 1, 1987

Oxide-capped titanium silicide formation

TEXAS INSTRUMENTS INC87 citations96
US4676866AJun 30, 1987

Process to increase tin thickness

TEXAS INSTRUMENTS INC67 citations96
US4112575ASep 12, 1978

Fabrication methods for the high capacity ram cell

TEXAS INSTRUMENTS INC57 citations96
US6222251B1Apr 24, 2001

Variable threshold voltage gate electrode for higher performance mosfets

TEXAS INSTRUMENTS INC42 citations92
US6040249AMar 21, 2000

Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy

TEXAS INSTRUMENTS INC39 citations92
US4814854AMar 21, 1989

Integrated circuit device and process with tin-gate transistor

TEXAS INSTRUMENTS INC47 citations92
US4811076AMar 7, 1989

Device and process with doubled capacitors

TEXAS INSTRUMENTS INC52 citations92
US4354896AOct 19, 1982

Formation of submicron substrate element

TEXAS INSTRUMENTS INC44 citations92
US6037230AMar 14, 2000

Method to reduce diode capacitance of short-channel MOSFETS

TEXAS INSTRUMENTS INC17 citations84
US6072715AJun 6, 2000

Memory circuit and method of construction

TEXAS INSTRUMENTS INC9 citations74
US6087268AJul 11, 2000

Method to reduce boron diffusion through gate oxide using sidewall spacers

TEXAS INSTRUMENTS INC1 citations52

TIGELAAR HOWARD L

1 patent