Inventor

WANG YU-JEN

TW231 patents

⚠️ This page may combine multiple inventors who share the name “WANG YU-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG YU-JEN

TAIWAN SEMICONDUCTOR MFG CO LTD

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode

Extra doped region for back-side deep trench isolation

Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch process

Image sensor comprising reflective guide layer and method of forming the same

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition

Dual magnetic tunnel junction (DMTJ) stack design

Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation

Highly selective ion beam etch hard mask for sub 60nm MRAM devices

Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process

Silicon oxynitride based encapsulation layer for magnetic tunnel junctions

Multiple spacer assisted physical etching of sub 60nm MRAM devices

Highly selective ion beam etch hard mask for sub 60nm MRAM devices

Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensor

Post treatment to reduce shunting devices for physical etching process

Extra doped region for back-side deep trench isolation

Image sensor comprising reflective guide layer and method of forming the same

Extra doped region for back-side deep trench isolation

MIM capacitors with improved reliability

HEADWAY TECH INC

Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching

Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devices

Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering

Spacer assisted ion beam etching of spin torque magnetic random access memory

Hybrid metallic hard mask stack for MTJ etching

HEADWAY TECHNOLOGIES INC

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Mg discontinuous insertion layer for improving MTJ shunt

Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications

Hybridized oxide capping layer for perpendicular magnetic anisotropy

FU LUONG HI TECH CO LTD

Hinge assembly capable of damping door movement

Door closer

Sink stopper

Hinge device with a returning member for automatically closing an open door

WANG YU-JEN

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications

TAIWAN SEMICONDUCTOR MFG

Spin torque transfer MRAM device

MRAM device with continuous MTJ tunnel layers

In-situ formed capping layer in MTJ devices

JAN GUENOLE

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

BEACH ROBERT

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

KULA WITOLD

Storage element for STT MRAM applications

CHUNG SHINE

Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate

WANG YUNG-HUNG

In-situ formed capping layer in MTJ devices

LIN CHUN-JUNG

Reverse connection MTJ cell for STT MRAM

HYCON TECH CORP

Multi-mode operation method for capacitive touch panel

UNIV NATIONAL CHIAO TUNG

Liquid crystal lens