Inventor
YAMAGISHI HIROTOSHI
JP38 patents
⚠️ This page may combine multiple inventors who share the name “YAMAGISHI HIROTOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
35 patentsUS5728211AMar 17, 1998
Silicon single crystal with low defect density and method of producing same
SHINETSU HANDOTAI KK57 citations96
US5667584ASep 16, 1997
Method for the preparation of a single crystal of silicon with decreased crystal defects
SHINETSU HANDOTAI KK64 citations96
US5126113AJun 30, 1992
Apparatus for producing czochralski-grown single crystals
SHINETSU HANDOTAI KK58 citations95
US5248378ASep 28, 1993
Method and apparatus for producing silicon single crystal
SHINETSU HANDOTAI KK62 citations94
US5550354AAug 27, 1996
High-frequency induction heating coil
SHINETSU HANDOTAI KK19 citations93
US5792255AAug 11, 1998
Manufacturing method of single crystal
SHINETSU HANDOTAI KK24 citations92
US5462010AOct 31, 1995
Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus
SHINETSU HANDOTAI KK32 citations92
US5373805ADec 20, 1994
Single crystal pulling apparatus
SHINETSU HANDOTAI KK43 citations92
US5361721ANov 8, 1994
Single crystal pulling apparatus
SHINETSU HANDOTAI KK26 citations92
US5359959ANov 1, 1994
Method for pulling up semi-conductor single crystal
SHINETSU HANDOTAI KK20 citations92
US5306387AApr 26, 1994
Method for pulling up semiconductor single crystal
SHINETSU HANDOTAI KK20 citations92
US4956153ASep 11, 1990
Apparatus for Czochralski single crystal growing
SHINETSU HANDOTAI KK42 citations90
US5980630ANov 9, 1999
Manufacturing method of single crystal and apparatus of manufacturing the same
SHINETSU HANDOTAI KK12 citations74
US5843229ADec 1, 1998
Crystal holding apparatus
SHINETSU HANDOTAI KK10 citations74
US5720809AFeb 24, 1998
Crucible for pulling silicon single crystal
SHINETSU HANDOTAI KK15 citations74
US5556461ASep 17, 1996
Method for producing a silicon single crystal by a float-zone method
SHINETSU HANDOTAI KK13 citations74
US5340434AAug 23, 1994
Process for producing silicon single crystal
SHINETSU HANDOTAI KK10 citations74
US5258092ANov 2, 1993
Method of growing silicon monocrystalline rod
SHINETSU HANDOTAI KK14 citations74
US5110404AMay 5, 1992
Method for heat processing of silicon
SHINETSU HANDOTAI KK15 citations74
US5834322ANov 10, 1998
Heat treatment of Si single crystal
SHINETSU HANDOTAI KK14 citations73
US5792258AAug 11, 1998
High-frequency induction heater and method of producing semiconductor single crystal using the same
SHINETSU HANDOTAI KK7 citations73
US5534112AJul 9, 1996
Method for testing electrical properties of silicon single crystal
SHINETSU HANDOTAI KK7 citations73
US5386796AFeb 7, 1995
Method for testing quality of silicon wafer
SHINETSU HANDOTAI KK16 citations73
US5501172AMar 26, 1996
Method of growing silicon single crystals
SHINETSU HANDOTAI KK8 citations72
US6113686ASep 5, 2000
Single crystal growing method and apparatus
SHINETSU HANDOTAI KK11 citations71
US5067989ANov 26, 1991
Single crystal silicon
SHINETSU HANDOTAI KK13 citations71
US5667588ASep 16, 1997
Single crystal pulling apparatus
SHINETSU HANDOTAI KK7 citations70
US6120749ASep 19, 2000
Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same
SHINETSU HANDOTAI KK5 citations63
US5788718AAug 4, 1998
Apparatus and a method for growing a single crystal
SHINETSU HANDOTAI KK5 citations63
US5735951AApr 7, 1998
Single crystal pulling apparatus
SHINETSU HANDOTAI KK5 citations63
US5688321ANov 18, 1997
Apparatus for producing a silicon single crystal by a float-zone method
SHINETSU HANDOTAI KK4 citations63
US5348893ASep 20, 1994
Method for treatment of semiconductor wafer
SHINETSU HANDOTAI KK5 citations63
US5688319ANov 18, 1997
Method for testing electrical properties of silicon single crystal
SHINETSU HANDOTAI KK5 citations62
US5262338ANov 16, 1993
Method for fabrication of semiconductor device
SHINETSU HANDOTAI KK2 citations62
US5871583AFeb 16, 1999
Apparatus for producing silicon single crystal
SHINETSU HANDOTAI KK0 citations42