P

Inventor

KUMAGAI NAOKI

JP49 patents
⚠️ This page may combine multiple inventors who share the name “KUMAGAI NAOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJI ELECTRIC CO LTD

35 patents
US6570413B1May 27, 2003

Driver circuit for switching device

FUJI ELECTRIC CO LTD61 citations96
US5896043AApr 20, 1999

Level shift circuit

FUJI ELECTRIC CO LTD59 citations96
US5304802AApr 19, 1994

Semiconductor device including overvoltage protective circuit

FUJI ELECTRIC CO LTD55 citations96
US6977425B2Dec 20, 2005

Semiconductor device having a lateral MOSFET and combined IC using the same

FUJI ELECTRIC CO LTD24 citations92
US6501321B2Dec 31, 2002

Level shift circuit

FUJI ELECTRIC CO LTD24 citations92
US6326831B1Dec 4, 2001

Level shift circuit

FUJI ELECTRIC CO LTD29 citations92
US6323539B1Nov 27, 2001

High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

FUJI ELECTRIC CO LTD34 citations92
US6124628ASep 26, 2000

High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

FUJI ELECTRIC CO LTD52 citations92
US5475333ADec 12, 1995

Built-in drive power-source semiconductor device

FUJI ELECTRIC CO LTD27 citations92
US5430323AJul 4, 1995

Injection control-type Schottky barrier rectifier

FUJI ELECTRIC CO LTD29 citations92
US5303110AApr 12, 1994

Insulated-gate controlled semiconductor device

FUJI ELECTRIC CO LTD26 citations92
US6870223B2Mar 22, 2005

High power semiconductor device having a Schottky barrier diode

FUJI ELECTRIC CO LTD18 citations91
US9825025B2Nov 21, 2017

Semiconductor device and method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD7 citations84
US5844760ADec 1, 1998

Insulated-gate controlled semiconductor device

FUJI ELECTRIC CO LTD18 citations84
US5585650ADec 17, 1996

Semiconductor bidirectional switch and method of driving the same

FUJI ELECTRIC CO LTD19 citations84
US5925900AJul 20, 1999

Emitter-switched thyristor having a floating ohmic contact

FUJI ELECTRIC CO LTD13 citations74
US5477077ADec 19, 1995

Semiconductor device and a method for the manufacture thereof

FUJI ELECTRIC CO LTD9 citations74
US5051808ASep 24, 1991

Semiconductor device with low inductance of wirings connecting individual elements of the device

FUJI ELECTRIC CO LTD11 citations74
US10770581B2Sep 8, 2020

Semiconductor device

FUJI ELECTRIC CO LTD3 citations73
US10522672B2Dec 31, 2019

Semiconductor device

FUJI ELECTRIC CO LTD2 citations73
US9595608B2Mar 14, 2017

Semiconductor device

FUJI ELECTRIC CO LTD3 citations73
US9349855B2May 24, 2016

Wide band gap semiconductor device

FUJI ELECTRIC CO LTD4 citations73
US5744830AApr 28, 1998

Semiconductor device

FUJI ELECTRIC CO LTD11 citations70
US9390843B2Jul 12, 2016

Input circuit includes a constant current circuit

FUJI ELECTRIC CO LTD2 citations63
US9318547B2Apr 19, 2016

Wide bandgap insulated gate semiconductor device

FUJI ELECTRIC CO LTD2 citations63
US9093493B2Jul 28, 2015

Wide bandgap insulated gate semiconductor device

FUJI ELECTRIC CO LTD3 citations63
US7247923B2Jul 24, 2007

Semiconductor device having a lateral MOSFET and combined IC using the same

FUJI ELECTRIC CO LTD2 citations63
US5068581ANov 26, 1991

Horizontal deflection circuit for high-frequency scanning

FUJI ELECTRIC CO LTD5 citations62
US7476935B2Jan 13, 2009

High power semiconductor device having a schottky barrier diode

FUJI ELECTRIC CO LTD4 citations61
US11538902B2Dec 27, 2022

Silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US9761705B2Sep 12, 2017

Wide band gap semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US10096680B2Oct 9, 2018

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD1 citations51
US10770582B2Sep 8, 2020

Semiconductor device

FUJI ELECTRIC CO LTD0 citations42
US10451665B2Oct 22, 2019

Pulse current application circuit and control method thereof

FUJI ELECTRIC CO LTD0 citations42
US10147797B2Dec 4, 2018

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations41

FUJI ELEC DEVICE TECH CO LTD

4 patents

AMP INC

2 patents

ITOGIHAN COMPANY LTD

2 patents

HITACHI LTD

2 patents

PALOMA KOGYO KK

1 patent

WHITAKER CORP

1 patent

YAMATO SCIENT CO LTD

1 patent

KOHAMA TAKANORI

1 patent