Inventor

JEON JOONG S

US26 patents

⚠️ This page may combine multiple inventors who share the name “JEON JOONG S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JEON JOONG S

ADVANCED MICRO DEVICES INC

Preparation of composite high-K/standard-K dielectrics for semiconductor devices

Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices

Method for forming a thin, high quality buffer layer in a field effect transistor and related structure

Implantation into high-K dielectric material after gate etch to facilitate removal

Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material

Interfacial barrier layer in semiconductor devices with high-K gate dielectric material

Preparation of composite high-K/standard-K dielectrics for semiconductor devices

Method for forming a field effect transistor having a high-k gate dielectric and related structure

CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric

Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure

Treatment of dielectric material to enhance etch rate

Method for forming polysilicon gate on high-k dielectric and related structure

Method for forming a field effect transistor having a high-k gate dielectric

Stacked polysilicon layer for boron penetration inhibition

Semiconductor component and method of manufacture

Memory cell structure having nitride layer with reduced charge loss and method for fabricating same

SAMSUNG ELECTRONICS CO LTD

Field effect transistor having germanium nanorod and method of manufacturing the same

Method of fabricating Schottky barrier transistor

Method of fabricating Schottky barrier transistor

Semiconductor device and method of fabricating metal gate of the same

Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device

Nonvolatile memory devices and methods of fabricating the same

MOON CHANG-WOOK

Germanium silicide layer including vanadium, platinum, and nickel

Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer

KIM JUN-YOUN

CMOS transistor using germanium condensation and method of fabricating the same

PARK SUNG-HO

Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same