Inventor
UNNO YUKARI
JP4 patents
Patents
4 patentsUS5521416AMay 28, 1996
Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing the same
TOSHIBA KK7 citations71
US5227654AJul 13, 1993
Semiconductor device with improved collector structure
TOSHIBA KK10 citations71
US5243557ASep 7, 1993
Bi-CMOS semiconductor integrated circuit
TOSHIBA KK4 citations61
US5773344AJun 30, 1998
Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing same
TOSHIBA KK1 citations49