Inventor
HUANG GENSHENG
US2 patents
Patents
2 patentsUS10115859B2Oct 30, 2018
Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
TANSU NELSON2 citations67
US9525117B2Dec 20, 2016
Thermoelectric materials based on single crystal AlInN—GaN grown by metalorganic vapor phase epitaxy
TANSU NELSON0 citations44