Inventor
SUDA KAKUTARO
JP14 patents
Patents
14 patentsUS5731617AMar 24, 1998
Semiconductor device having bipolar transistor and field effect transistor
MITSUBISHI ELECTRIC CORP28 citations92
US6441441B1Aug 27, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP17 citations83
US4729969AMar 8, 1988
Method for forming silicide electrode in semiconductor device
MITSUBISHI ELECTRIC CORP19 citations81
US6602725B2Aug 5, 2003
Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby
MITSUBISHI ELECTRIC CORP11 citations73
US6303944B1Oct 16, 2001
Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby
MITSUBISHI ELECTRIC CORP9 citations73
US6215160B1Apr 10, 2001
Semiconductor device having bipolar transistor and field effect transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP10 citations73
US5310691AMay 10, 1994
Method of manufacturing semiconductor device including formation of alignment mark
MITSUBISHI ELECTRIC CORP11 citations73
US5095355AMar 10, 1992
Bipolar cross-coupled memory cells having improved immunity to soft errors
MITSUBISHI ELECTRIC CORP16 citations73
US4840920AJun 20, 1989
Method of isolating a semiconductor device using local oxidation
MITSUBISHI ELECTRIC CORP10 citations73
US4705599ANov 10, 1987
Method for fabricating bipolar transistor in integrated circuit
MITSUBISHI ELECTRIC CORP20 citations73
US6259147B1Jul 10, 2001
Semiconductor device having a fuse layer
MITSUBISHI ELECTRIC CORP7 citations71
US6027962AFeb 22, 2000
Method of manufacturing semiconductor device having bipolar transistor and field-effect transistor
MITSUBISHI ELECTRIC CORP10 citations71
US5256898AOct 26, 1993
Semiconductor device with a different epitaxial thickness between adjacent circuit regions
MITSUBISHI ELECTRIC CORP2 citations62
US4897363AJan 30, 1990
Method of manufacturing semiconductor device isolation
MITSUBISHI ELECTRIC CORP3 citations62