Inventor
PU BRYAN Y
US23 patents
⚠️ This page may combine multiple inventors who share the name “PU BRYAN Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
18 patentsUS6716302B2Apr 6, 2004
Dielectric etch chamber with expanded process window
APPLIED MATERIALS INC91 citations98
US6284093B1Sep 4, 2001
Shield or ring surrounding semiconductor workpiece in plasma chamber
APPLIED MATERIALS INC133 citations98
US6403491B1Jun 11, 2002
Etch method using a dielectric etch chamber with expanded process window
APPLIED MATERIALS INC396 citations97
US6273022B1Aug 14, 2001
Distributed inductively-coupled plasma source
APPLIED MATERIALS INC96 citations97
US6797639B2Sep 28, 2004
Dielectric etch chamber with expanded process window
APPLIED MATERIALS INC63 citations96
US6451703B1Sep 17, 2002
Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
APPLIED MATERIALS INC96 citations96
US6689249B2Feb 10, 2004
Shield or ring surrounding semiconductor workpiece in plasma chamber
APPLIED MATERIALS INC48 citations95
US6568346B2May 27, 2003
Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply
APPLIED MATERIALS INC66 citations95
US6513452B2Feb 4, 2003
Adjusting DC bias voltage in plasma chamber
APPLIED MATERIALS INC29 citations92
US6221782B1Apr 24, 2001
Adjusting DC bias voltage in plasma chamber
APPLIED MATERIALS INC31 citations92
US7374636B2May 20, 2008
Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
APPLIED MATERIALS INC21 citations91
US6613689B2Sep 2, 2003
Magnetically enhanced plasma oxide etch using hexafluorobutadiene
APPLIED MATERIALS INC38 citations91
US7879186B2Feb 1, 2011
Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
APPLIED MATERIALS INC7 citations84
US7422654B2Sep 9, 2008
Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
APPLIED MATERIALS INC11 citations84
US7838430B2Nov 23, 2010
Plasma control using dual cathode frequency mixing
APPLIED MATERIALS INC8 citations83
US7807064B2Oct 5, 2010
Halogen-free amorphous carbon mask etch having high selectivity to photoresist
APPLIED MATERIALS INC8 citations83
US7316199B2Jan 8, 2008
Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
APPLIED MATERIALS INC9 citations83
US7736914B2Jun 15, 2010
Plasma control using dual cathode frequency mixing and controlling the level of polymer formation
APPLIED MATERIALS INC3 citations62