Inventor
HOPKINS JOHN D
US220 patents
⚠️ This page may combine multiple inventors who share the name “HOPKINS JOHN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
45 patentsUS10283520B2May 7, 2019
Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor
MICRON TECHNOLOGY INC20 citations94
US10593695B1Mar 17, 2020
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC29 citations93
US10381377B2Aug 13, 2019
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
MICRON TECHNOLOGY INC14 citations93
US10090318B2Oct 2, 2018
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC23 citations93
US10083981B2Sep 25, 2018
Memory arrays, and methods of forming memory arrays
MICRON TECHNOLOGY INC22 citations93
US9893083B1Feb 13, 2018
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
MICRON TECHNOLOGY INC18 citations93
US9793124B2Oct 17, 2017
Semiconductor structures
MICRON TECHNOLOGY INC12 citations93
US11282847B2Mar 22, 2022
Methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC11 citations86
US11251190B2Feb 15, 2022
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC9 citations86
US11239248B2Feb 1, 2022
Microelectronic devices including stair step structures, and related electronic devices and methods
MICRON TECHNOLOGY INC6 citations86
US10038008B1Jul 31, 2018
Integrated structures and NAND memory arrays
MICRON TECHNOLOGY INC13 citations84
US9613973B2Apr 4, 2017
Memory having a continuous channel
MICRON TECHNOLOGY INC5 citations84
US9105737B2Aug 11, 2015
Semiconductor constructions
MICRON TECHNOLOGY INC7 citations84
US8921034B2Dec 30, 2014
Patterned bases, and patterning methods
MICRON TECHNOLOGY INC10 citations84
US8593001B2Nov 26, 2013
Patterned semiconductor bases
MICRON TECHNOLOGY INC6 citations84
US12230325B2Feb 18, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC2 citations75
US11967632B2Apr 23, 2024
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC4 citations75
US11805651B2Oct 31, 2023
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC2 citations73
US11744069B2Aug 29, 2023
Integrated circuitry and method used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC2 citations73
US11715692B2Aug 1, 2023
Microelectronic devices including conductive rails, and related methods
MICRON TECHNOLOGY INC2 citations73
US11476332B2Oct 18, 2022
Integrated assemblies, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations73
US11411012B2Aug 9, 2022
Methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC4 citations73
US11404436B2Aug 2, 2022
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC3 citations73
US11398486B2Jul 26, 2022
Microelectronic devices with tier stacks with varied tier thicknesses, and related methods and systems
MICRON TECHNOLOGY INC2 citations73
US11393835B2Jul 19, 2022
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC4 citations73
US11315877B2Apr 26, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC2 citations73
US11177278B2Nov 16, 2021
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC2 citations73
US11056505B2Jul 6, 2021
Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations73
US10593766B2Mar 17, 2020
Methods of fabricating semiconductor structures and related semiconductor structures
MICRON TECHNOLOGY INC1 citations73
US10553611B2Feb 4, 2020
Memory arrays and methods of fabricating integrated structure
MICRON TECHNOLOGY INC1 citations73
US10546998B2Jan 28, 2020
Methods of forming memory and methods of forming vertically-stacked structures
MICRON TECHNOLOGY INC3 citations73
US12176034B2Dec 24, 2024
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC2 citations72
US11393756B2Jul 19, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC5 citations72
US11049768B2Jun 29, 2021
Methods of forming microelectronic devices, and related microelectronic devices, and electronic systems
MICRON TECHNOLOGY INC4 citations72
US10790303B2Sep 29, 2020
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations72
US10672785B2Jun 2, 2020
Integrated structures of vertically-stacked memory cells
MICRON TECHNOLOGY INC3 citations72
US10304853B2May 28, 2019
Memory arrays, and methods of forming memory arrays
MICRON TECHNOLOGY INC1 citations72
US10157933B2Dec 18, 2018
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus
MICRON TECHNOLOGY INC2 citations72
US11244954B2Feb 8, 2022
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC2 citations71
US11127691B2Sep 21, 2021
Methods of forming a semiconductor device
MICRON TECHNOLOGY INC2 citations71
US12593447B2Mar 31, 2026
Electronic devices comprising an oxide fill region, and related electronic systems and methods
MICRON TECHNOLOGY INC0 citations63
US12543311B2Feb 3, 2026
Electronic devices comprising blocking regions, and related electronic systems and methods
MICRON TECHNOLOGY INC0 citations63
US12471295B2Nov 11, 2025
Microelectronic devices with tier stacks with varied tier thicknesses, and related methods and systems
MICRON TECHNOLOGY INC0 citations63
US12462852B2Nov 4, 2025
Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration
MICRON TECHNOLOGY INC0 citations63
US12426266B2Sep 23, 2025
Memory arrays comprising strings of memory cells with conductive islands
MICRON TECHNOLOGY INC0 citations63
LODESTAR LICENSING GROUP LLC
3 patentsUS12532474B2Jan 20, 2026
Memory arrays and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations63
US12464718B2Nov 4, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations63
US12453089B2Oct 21, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations63
HOPKINS JOHN D
2 patentsShowing the top 50 of 220 patents by PatentIndex Score.