Inventor
LI ZHENGWEN
US113 patents
⚠️ This page may combine multiple inventors who share the name “LI ZHENGWEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
35 patentsUS8614136B1Dec 24, 2013
Techniques for fabricating janus MEMS transistors
IBM19 citations93
US10032897B2Jul 24, 2018
Single electron transistor with self-aligned Coulomb blockade
IBM5 citations84
US9680116B2Jun 13, 2017
Carbon nanotube vacuum transistors
IBM8 citations84
US9659939B1May 23, 2017
Integrated circuit having MIM capacitor with refractory metal silicided strap and method to fabricate same
IBM13 citations84
US9502405B1Nov 22, 2016
Semiconductor device with authentication code
IBM16 citations84
US9373702B2Jun 21, 2016
Carbon-doped cap for a raised active semiconductor region
IBM9 citations84
US9362178B1Jun 7, 2016
FinFET including varied fin height
IBM6 citations84
US9324792B1Apr 26, 2016
FinFET including varied fin height
IBM11 citations84
US9231072B2Jan 5, 2016
Multi-composition gate dielectric field effect transistors
IBM10 citations84
US8962408B2Feb 24, 2015
Replacement gate self-aligned carbon nanostructure transistor
IBM8 citations84
US8927378B2Jan 6, 2015
Trench silicide contact with low interface resistance
IBM17 citations84
US7768006B2Aug 3, 2010
Field effect structure and method including spacer shaped metal gate with asymmetric source and drain regions
IBM10 citations84
US10957586B2Mar 23, 2021
FDSOI with on-chip physically unclonable function
IBM2 citations73
US10658310B2May 19, 2020
Secure semiconductor chip by piezoelectricity
IBM2 citations73
US10573482B2Feb 25, 2020
Piezoelectric vacuum transistor
IBM2 citations73
US10079354B2Sep 18, 2018
Vertically aligned carbon nanotube trapezoid FIN structure
IBM3 citations73
US10062857B2Aug 28, 2018
Carbon nanotube vacuum transistors
IBM3 citations73
US10026648B2Jul 17, 2018
FDSOI with on-chip physically unclonable function
IBM2 citations73
US10026912B1Jul 17, 2018
Vertically integrated nanotube and quantum dot LED for active matrix display
IBM4 citations73
US9941202B2Apr 10, 2018
Dielectric thermal conductor for passivating efuse and metal resistor
IBM2 citations73
US9786851B2Oct 10, 2017
Transistor with trapeziod shaped carbon namotubes
IBM2 citations73
US9753006B2Sep 5, 2017
High density nano-array for sensing
IBM2 citations73
US9679897B1Jun 13, 2017
High density nanofluidic structure with precisely controlled nano-channel dimensions
IBM4 citations73
US9653695B2May 16, 2017
Transistor device with vertical carbon nanotube (CNT) arrays or non-vertical tapered CNT arrays
IBM2 citations73
US9620432B2Apr 11, 2017
Dielectric thermal conductor for passivating eFuse and metal resistor
IBM3 citations73
US9559202B2Jan 31, 2017
Method for forming metal semiconductor alloys in contact holes and trenches
IBM2 citations73
US8847287B1Sep 30, 2014
Janus complementary MEMS transistors and circuits
IBM5 citations73
US11361928B2Jun 14, 2022
Piezoelectric vacuum transistor
IBM0 citations63
US11088260B2Aug 10, 2021
On-chip integrated temperature protection device based on gel electrolyte
IBM0 citations63
US10832127B2Nov 10, 2020
Three-dimensional integration of neurosynaptic chips
IBM1 citations63
US9859494B1Jan 2, 2018
Nanoparticle with plural functionalities, and method of forming the nanoparticle
IBM1 citations63
US9650242B2May 16, 2017
Multi-faced component-based electromechanical device
IBM1 citations63
US9525147B2Dec 20, 2016
Fringing field assisted dielectrophoresis assembly of carbon nanotubes
IBM1 citations63
US9502673B2Nov 22, 2016
Transistor devices with tapered suspended vertical arrays of carbon nanotubes
IBM1 citations63
US9214388B2Dec 15, 2015
Bonded structure employing metal semiconductor alloy bonding
IBM2 citations63
GUO DECHAO
3 patentsUS8900935B2Dec 2, 2014
Deposition on a nanowire using atomic layer deposition
GUO DECHAO347 citations99
US8802482B2Aug 12, 2014
Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer
GUO DECHAO4 citations73
US9437677B2Sep 6, 2016
Deposition on a nanowire using atomic layer deposition
GUO DECHAO2 citations63
LI ZHENGWEN
3 patentsUS8232148B2Jul 31, 2012
Structure and method to make replacement metal gate and contact metal
LI ZHENGWEN19 citations92
US8759172B2Jun 24, 2014
Etch stop layer formation in metal gate process
LI ZHENGWEN7 citations84
US8916435B2Dec 23, 2014
Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
LI ZHENGWEN4 citations73
FAROOQ MUKTA G
2 patentsCHENG TIEN-JEN
2 patentsHUNAN YINSUN BAMBOO IND CO LTD
2 patentsYU JIAN
1 patentLi yan zun
1 patentCLEVENGER LAWRENCE A
1 patentShowing the top 50 of 113 patents by PatentIndex Score.