Inventor
KREPS SCOTT A
US27 patents
⚠️ This page may combine multiple inventors who share the name “KREPS SCOTT A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RJ MEARS LLC
17 patentsUS7288457B2Oct 30, 2007
Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions
RJ MEARS LLC111 citations99
US7279701B2Oct 9, 2007
Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions
RJ MEARS LLC119 citations99
US7265002B2Sep 4, 2007
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
RJ MEARS LLC114 citations99
US7071119B2Jul 4, 2006
Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
RJ MEARS LLC112 citations99
US7034329B2Apr 25, 2006
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
RJ MEARS LLC114 citations99
US7033437B2Apr 25, 2006
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC110 citations99
US7018900B2Mar 28, 2006
Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
RJ MEARS LLC114 citations99
US6958486B2Oct 25, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC114 citations99
US6952018B2Oct 4, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC112 citations99
US6927413B2Aug 9, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC113 citations99
US6897472B2May 24, 2005
Semiconductor device including MOSFET having band-engineered superlattice
RJ MEARS LLC153 citations99
US6891188B2May 10, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC123 citations99
US6833294B1Dec 21, 2004
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC127 citations99
US6830964B1Dec 14, 2004
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC136 citations99
US7202494B2Apr 10, 2007
FINFET including a superlattice
RJ MEARS LLC140 citations98
US7153763B2Dec 26, 2006
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
RJ MEARS LLC119 citations98
US6878576B1Apr 12, 2005
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC117 citations97
MEARS TECHNOLOGIES INC
9 patentsUS7436026B2Oct 14, 2008
Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
MEARS TECHNOLOGIES INC113 citations99
US7435988B2Oct 14, 2008
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
MEARS TECHNOLOGIES INC110 citations99
US7303948B2Dec 4, 2007
Semiconductor device including MOSFET having band-engineered superlattice
MEARS TECHNOLOGIES INC110 citations99
US7659539B2Feb 9, 2010
Semiconductor device including a floating gate memory cell with a superlattice channel
MEARS TECHNOLOGIES INC118 citations98
US7612366B2Nov 3, 2009
Semiconductor device including a strained superlattice layer above a stress layer
MEARS TECHNOLOGIES INC120 citations98
US7598515B2Oct 6, 2009
Semiconductor device including a strained superlattice and overlying stress layer and related methods
MEARS TECHNOLOGIES INC115 citations98
US7586116B2Sep 8, 2009
Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
MEARS TECHNOLOGIES INC111 citations98
US7531828B2May 12, 2009
Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions
MEARS TECHNOLOGIES INC118 citations98
US7446002B2Nov 4, 2008
Method for making a semiconductor device comprising a superlattice dielectric interface layer
MEARS TECHNOLOGIES INC120 citations97