Inventor
DUKOVSKI ILIJA
US22 patents
⚠️ This page may combine multiple inventors who share the name “DUKOVSKI ILIJA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RJ MEARS LLC
12 patentsUS7265002B2Sep 4, 2007
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
RJ MEARS LLC114 citations99
US7071119B2Jul 4, 2006
Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
RJ MEARS LLC112 citations99
US7033437B2Apr 25, 2006
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC110 citations99
US7034329B2Apr 25, 2006
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
RJ MEARS LLC114 citations99
US6958486B2Oct 25, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC114 citations99
US6952018B2Oct 4, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC112 citations99
US6927413B2Aug 9, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC113 citations99
US6897472B2May 24, 2005
Semiconductor device including MOSFET having band-engineered superlattice
RJ MEARS LLC153 citations99
US6891188B2May 10, 2005
Semiconductor device including band-engineered superlattice
RJ MEARS LLC123 citations99
US6833294B1Dec 21, 2004
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC127 citations99
US6830964B1Dec 14, 2004
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC136 citations99
US6878576B1Apr 12, 2005
Method for making semiconductor device including band-engineered superlattice
RJ MEARS LLC117 citations97
MEARS TECHNOLOGIES INC
9 patentsUS7435988B2Oct 14, 2008
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
MEARS TECHNOLOGIES INC110 citations99
US7303948B2Dec 4, 2007
Semiconductor device including MOSFET having band-engineered superlattice
MEARS TECHNOLOGIES INC110 citations99
US7880161B2Feb 1, 2011
Multiple-wavelength opto-electronic device including a superlattice
MEARS TECHNOLOGIES INC121 citations98
US7863066B2Jan 4, 2011
Method for making a multiple-wavelength opto-electronic device including a superlattice
MEARS TECHNOLOGIES INC110 citations97
US7718996B2May 18, 2010
Semiconductor device comprising a lattice matching layer
MEARS TECHNOLOGIES INC110 citations97
US7700447B2Apr 20, 2010
Method for making a semiconductor device comprising a lattice matching layer
MEARS TECHNOLOGIES INC113 citations97
US7625767B2Dec 1, 2009
Methods of making spintronic devices with constrained spintronic dopant
MEARS TECHNOLOGIES INC117 citations97
US7517702B2Apr 14, 2009
Method for making an electronic device including a poled superlattice having a net electrical dipole moment
MEARS TECHNOLOGIES INC130 citations97
US7446002B2Nov 4, 2008
Method for making a semiconductor device comprising a superlattice dielectric interface layer
MEARS TECHNOLOGIES INC120 citations97