Inventor
SHIKATA SHINICHI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “SHIKATA SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
25 patentsUS5446329AAug 29, 1995
Surface acoustic wave element
SUMITOMO ELECTRIC INDUSTRIES52 citations96
US5382809AJan 17, 1995
Semiconductor device including semiconductor diamond
SUMITOMO ELECTRIC INDUSTRIES54 citations96
US5500077AMar 19, 1996
Method of polishing/flattening diamond
SUMITOMO ELECTRIC INDUSTRIES33 citations93
US5497726AMar 12, 1996
Method of manufacturing a surface acoustic wave element
SUMITOMO ELECTRIC INDUSTRIES23 citations93
US5426340AJun 20, 1995
Surface acoustic wave device and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES44 citations93
US5401544AMar 28, 1995
Method for manufacturing a surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES48 citations93
US5390401AFeb 21, 1995
Method for producing a surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES40 citations93
US5344526ASep 6, 1994
Method for etching diamond
SUMITOMO ELECTRIC INDUSTRIES30 citations93
US5343107AAug 30, 1994
Surface acoustic wave element and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES35 citations93
US5320865AJun 14, 1994
Method of manufacturing a surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES23 citations93
US5294858AMar 15, 1994
Surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES24 citations93
US4859618AAug 22, 1989
Method of producing the gate electrode of a field effect transistor
SUMITOMO ELECTRIC INDUSTRIES32 citations93
US6642813B1Nov 4, 2003
Surface acoustic wave device utilizing a ZnO layer and a diamond layer
SUMITOMO ELECTRIC INDUSTRIES14 citations84
US5624853AApr 29, 1997
Method for forming heterojunction bipolar transistors
SUMITOMO ELECTRIC INDUSTRIES17 citations82
US6448688B2Sep 10, 2002
Hard carbon film and surface-acoustic-wave substrate
SUMITOMO ELECTRIC INDUSTRIES13 citations74
US5814918ASep 29, 1998
Diamond-ZnO surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES10 citations74
US5536952AJul 16, 1996
Heterojunction bipolar transistor
SUMITOMO ELECTRIC INDUSTRIES13 citations74
US5501909AMar 26, 1996
Polycrystalline diamond substrate and process for producing the same
SUMITOMO ELECTRIC INDUSTRIES8 citations74
US5264379ANov 23, 1993
Method of making a hetero-junction bipolar transistor
SUMITOMO ELECTRIC INDUSTRIES9 citations74
US5235236AAug 10, 1993
Surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES17 citations74
US4772489ASep 20, 1988
Method of annealing a compound semiconductor substrate
SUMITOMO ELECTRIC INDUSTRIES16 citations74
US6469416B1Oct 22, 2002
Surface acoustic wave device
SUMITOMO ELECTRIC INDUSTRIES7 citations73
US6416865B1Jul 9, 2002
Hard carbon film and surface acoustic-wave substrate
SUMITOMO ELECTRIC INDUSTRIES3 citations63
US5463901ANov 7, 1995
Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack
SUMITOMO ELECTRIC INDUSTRIES3 citations63
US5252553AOct 12, 1993
Process for preparing a superconducting thin film of compound oxide
SUMITOMO ELECTRIC INDUSTRIES3 citations62
SEIKO EPSON CORP
3 patentsYAMADA TAKATOSHI
2 patentsUS8075359B2Dec 13, 2011
Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same
YAMADA TAKATOSHI4 citations60
US8735907B2May 27, 2014
Ohmic electrode for use in a semiconductor diamond device
YAMADA TAKATOSHI2 citations54