Inventor
BAE IL-MAN
KR13 patents
Patents
13 patentsUS6242960B1Jun 5, 2001
Internal clock signal generating circuit employing pulse generator
SAMSUNG ELECTRONICS CO LTD27 citations92
US7288967B2Oct 30, 2007
Differential output driver and semiconductor device having the same
SAMSUNG ELECTRONICS CO LTD30 citations91
US7055087B2May 30, 2006
Memory device for use in high-speed block pipelined Reed-Solomon decoder, method of accessing the memory device, and Reed-Solomon decoder having the memory device
SAMSUNG ELECTRONICS CO LTD12 citations83
US7560976B2Jul 14, 2009
Method of operating a semiconductor device and the semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations82
US7203097B2Apr 10, 2007
Method of operating a semiconductor device and the semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations82
US6222787B1Apr 24, 2001
Integrated circuit memory devices having improved sense and restore operation reliability
SAMSUNG ELECTRONICS CO LTD13 citations73
US6094080AJul 25, 2000
Internal clock signal generator for synchronous memory device
SAMSUNG ELECTRONICS CO LTD13 citations72
US6901018B2May 31, 2005
Method of generating initializing signal in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations62
US6791892B2Sep 14, 2004
Method of generating an initializing signal during power-up of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US6342808B1Jan 29, 2002
High voltage generating circuit
SAMSUNG ELECTRONICS CO LTD2 citations62
US7984261B2Jul 19, 2011
Memory expansion structure in multi-path accessible semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations61
US7586808B2Sep 8, 2009
Memory device for use in high-speed block pipelined reed-solomon decoder, method of accessing the memory device, and reed-solomon decoder having the memory device
SAMSUNG ELECTRONICS CO LTD4 citations61
US6236604B1May 22, 2001
Row address circuit of semiconductor memory device and row addressing method in refresh mode
SAMSUNG ELECTRONICS CO LTD0 citations41