Inventor

PARK JEONG-HEON

KR41 patents

⚠️ This page may combine multiple inventors who share the name “PARK JEONG-HEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK JEONG-HEON

SAMSUNG ELECTRONICS CO LTD

Magnetic memory device, method for manufacturing the same, and substrate treating apparatus

Magnetoresistive random access memory devices and methods of manufacturing the same

Method of manufacturing a magnetoresistive random access memory device and method of manufacturing a semiconductor chip including the same

Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry

CMP slurry for forming aluminum film, CMP method using the slurry, and method for forming aluminum wiring using the CMP method

Test patterns and methods of controlling CMP process using the same

Sputtering apparatus and method of fabricating magnetic memory device using the same

Semiconductor device, magnetoresistive random access memory device, and semiconductor chip including the same

Sputtering apparatus and method of fabricating magnetic memory device using the same

Magnetic memory device including a free layer and a pinned layer

Method for isolating self-aligned contact pads

Magnetic memory device

Apparatus for depositing a substrate and deposition system having the same

Magnetic memory device

Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same

Magnetoresistive random access memory device

Process control method and process control system for manufacturing semiconductor device

Magnetoresistive random access memory devices and methods of manufacturing the same

Method of fabricating memory device

Test patterns and methods of controlling CMP process using the same

Magnetic memory devices

Magnetic memory device

Magnetic memory device

Semiconductor device having pinned layer with enhanced thermal endurance

IBM

Low degradation MRAM encapsulation process using silicon-rich silicon nitride film

Simplified double magnetic tunnel junctions

Fabricating a cap layer for a magnetic random access memory (MRAM) device

Boron segregation in magnetic tunnel junctions

High temperature endurable MTJ stack

Light element doped low magnetic moment material spin torque transfer MRAM

Boron segregation in magnetic tunnel junctions

Magnetic exchange coupled MTJ free layer having low switching current and high data retention

Magnetic exchange coupled MTJ free layer having low switching current and high data retention

Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material

PARK JEONG HEON

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

PARK JEONG-HEON

Semiconductor device having pinned layer with enhanced thermal endurance

LIM WOO-CHANG

Magnetic device